상세정보
학술지
Effect of Rf-Power Density on the Resistivity of Ga-Doped ZnO Film Deposited by Rf-Magnetron Sputter Deposition Technique
- 발행일
- 201005
- 출처
- Current Applied Physics, v.10 no.3 SUPPL., pp.S451-S454
- ISSN
- 1567-1739
- 출판사
- Elsevier
- 협약과제
- 09MB5500, 광캡쳐 구조 반사방지막 및 조성기울기를 갖는 Si/SiGe 박막 태양전지 기술 개발, 윤선진
- 초록
- Gallium-doped zinc oxide (GZO) films were studied using rf-magnetron sputter deposition technique for the use of transparent conducting oxide film. The effects of deposition parameters such as pressure, rf-power, and film thickness on electrical and optical characteristics of GZO films were evaluated to obtain transparent conducting film with high transmittance and low resistivity for a-Si:H thin film solar cells. The resistivity and the structural properties of GZO film strongly depended on rf-power density and film thickness. The 1200 nm-thick GZO film deposited at 15 mTorr and 150 °C with rf-power density of 4.46 W/cm2 showed the resistivity as low as 6.2 × 10-4 廓 cm and the average transmittance of 86.5% in visible light wavelength region of 400-800 nm. © 2010 Elsevier B.V. All rights reserved.
- KSP 제안 키워드
- Deposition parameters, Electrical and optical characteristics, GZO film, Ga-doped ZnO, Gallium doped zinc oxide(GZO), High transmittance, Power Density, RF Power, RF-magnetron sputter deposition, Sputter deposition technique, Thin film solar cells