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학술지 Effect of Rf-Power Density on the Resistivity of Ga-Doped ZnO Film Deposited by Rf-Magnetron Sputter Deposition Technique
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저자
김준관, 윤선진, 이재민, 임정욱
발행일
201005
출처
Current Applied Physics, v.10 no.3 SUPPL., pp.S451-S454
ISSN
1567-1739
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.cap.2010.01.008
협약과제
09MB5500, 광캡쳐 구조 반사방지막 및 조성기울기를 갖는 Si/SiGe 박막 태양전지 기술 개발, 윤선진
초록
Gallium-doped zinc oxide (GZO) films were studied using rf-magnetron sputter deposition technique for the use of transparent conducting oxide film. The effects of deposition parameters such as pressure, rf-power, and film thickness on electrical and optical characteristics of GZO films were evaluated to obtain transparent conducting film with high transmittance and low resistivity for a-Si:H thin film solar cells. The resistivity and the structural properties of GZO film strongly depended on rf-power density and film thickness. The 1200 nm-thick GZO film deposited at 15 mTorr and 150 °C with rf-power density of 4.46 W/cm2 showed the resistivity as low as 6.2 × 10-4 廓 cm and the average transmittance of 86.5% in visible light wavelength region of 400-800 nm. © 2010 Elsevier B.V. All rights reserved.
키워드
Ga-doped ZnO, RF-Magnetron sputter, RF-Power density, Solar cell, Transparent conducting oxide
KSP 제안 키워드
Deposition parameters, Electrical and optical characteristics, GZO film, Ga-doped ZnO, Gallium doped zinc oxide(GZO), High transmittance, Power Density, RF Power, RF-magnetron sputter deposition, Sputter deposition technique, Thin film solar cells