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Effect of Rf-Power Density on the Resistivity of Ga-Doped ZnO Film Deposited by Rf-Magnetron Sputter Deposition Technique
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- Authors
- Jun Kwan Kim, Sun Jin Yun, Jae Min Lee, Jung Wook Lim
- Issue Date
- 2010-05
- Citation
- Current Applied Physics, v.10, no.3 SUPPL., pp.S451-S454
- ISSN
- 1567-1739
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- Gallium-doped zinc oxide (GZO) films were studied using rf-magnetron sputter deposition technique for the use of transparent conducting oxide film. The effects of deposition parameters such as pressure, rf-power, and film thickness on electrical and optical characteristics of GZO films were evaluated to obtain transparent conducting film with high transmittance and low resistivity for a-Si:H thin film solar cells. The resistivity and the structural properties of GZO film strongly depended on rf-power density and film thickness. The 1200 nm-thick GZO film deposited at 15 mTorr and 150 °C with rf-power density of 4.46 W/cm2 showed the resistivity as low as 6.2 × 10-4 廓 cm and the average transmittance of 86.5% in visible light wavelength region of 400-800 nm. © 2010 Elsevier B.V. All rights reserved.
- KSP Keywords
- Deposition parameters, Electrical and optical characteristics, Film thickness, GZO film, Ga-doped ZnO(GZO), Gallium doped zinc oxide, High transmittance, Power Density, RF Power, RF-magnetron sputter deposition, Sputter deposition technique