상세정보
학술지
A Multi-Band CMOS Power Amplifier Using Reconfigurable Adaptive Power Cell Technique
- 저자
- 김백현, 이동호, 홍성철, 박민
- 발행일
- 201608
- 출처
- IEEE Microwave and Wireless Components Letters, v.26 no.8, pp.616-618
- ISSN
- 1531-1309
- 출판사
- IEEE
- 협약과제
- 15MS2900, 미래 사물지능통신 서비스를 위한 초고속 광역 와이파이 기술개발, 김천수
- 초록
- A reconfigurable adaptive power cell configuration for a multi-band CMOS power amplifier (PA) is presented, for long-range WLAN applications. The common gate (CG) transistor of a CMOS cascode power cell consists of four differently biased 4-transistor cells to have good linearity, two of which are subsidiary cells and are turned off to cover the higher frequency band. This allows the PA to operate in multi-band properly without any additional switches or paths for multi-band. The chip is fabricated in 40 nm CMOS technology, and its size including the ESD-protected pad is 1.985 × 1.61 mm2. The measurement results show that the proposed PA achieves the output power of 27.8 (28.2) dBm with the PAE of 52% (53%) at a high (low) frequency band.
- KSP 제안 키워드
- 40 nm, Adaptive power, CMOS Technology, CMOS power amplifier, Cell configuration, Long-range, Output power, WLAN applications, common gate, higher frequency band, measurement results