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A Multi-Band CMOS Power Amplifier Using Reconfigurable Adaptive Power Cell Technique
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- Authors
- Baekhyun Kim, Dong-Ho Lee, Songcheol Hong, Min Park
- Issue Date
- 2016-08
- Citation
- IEEE Microwave and Wireless Components Letters, v.26, no.8, pp.616-618
- ISSN
- 1531-1309
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- A reconfigurable adaptive power cell configuration for a multi-band CMOS power amplifier (PA) is presented, for long-range WLAN applications. The common gate (CG) transistor of a CMOS cascode power cell consists of four differently biased 4-transistor cells to have good linearity, two of which are subsidiary cells and are turned off to cover the higher frequency band. This allows the PA to operate in multi-band properly without any additional switches or paths for multi-band. The chip is fabricated in 40 nm CMOS technology, and its size including the ESD-protected pad is 1.985 × 1.61 mm2. The measurement results show that the proposed PA achieves the output power of 27.8 (28.2) dBm with the PAE of 52% (53%) at a high (low) frequency band.
- KSP Keywords
- 40 nm, Adaptive power, CMOS Technology, CMOS power amplifier, Cell configuration, Long-range, Output power, WLAN applications, common gate, higher frequency bands, measurement results