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학술지 A Multi-Band CMOS Power Amplifier Using Reconfigurable Adaptive Power Cell Technique
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저자
김백현, 이동호, 홍성철, 박민
발행일
201608
출처
IEEE Microwave and Wireless Components Letters, v.26 no.8, pp.616-618
ISSN
1531-1309
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LMWC.2016.2585569
협약과제
15MS2900, 미래 사물지능통신 서비스를 위한 초고속 광역 와이파이 기술개발, 김천수
초록
A reconfigurable adaptive power cell configuration for a multi-band CMOS power amplifier (PA) is presented, for long-range WLAN applications. The common gate (CG) transistor of a CMOS cascode power cell consists of four differently biased 4-transistor cells to have good linearity, two of which are subsidiary cells and are turned off to cover the higher frequency band. This allows the PA to operate in multi-band properly without any additional switches or paths for multi-band. The chip is fabricated in 40 nm CMOS technology, and its size including the ESD-protected pad is 1.985 × 1.61 mm2. The measurement results show that the proposed PA achieves the output power of 27.8 (28.2) dBm with the PAE of 52% (53%) at a high (low) frequency band.
키워드
Band switching, CMOS RF power amplifiers, IEEE 802.11ah standards, multi-band, reconfigurable matching
KSP 제안 키워드
40 nm, Adaptive power, Band switching, CMOS RF, CMOS Technology, CMOS power amplifier, Cell configuration, IEEE 802.11ah, Long-range, Output power, RF power amplifier