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High-Density Nano-Scale N-Channel Trench-Gated MOSFETs Using the Self-Aligned Technique
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- Authors
- Sang-Gi Kim, Jong-dae Kim, Jin-Gun Koo, Yil-Suk Yang, Jin-Ho Lee, Hoon-Soo Park, Kyou-Ho Lee
- Issue Date
- 2010-10
- Citation
- Journal of the Korean Physical Society, v.57, no.4, pp.802-805
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Abstract
- We propose a novel process technology for fabricating a very high density n-channel trench-gate metal oxide silicon field effect transistor (MOSFET) by using an oxide spacer and self-aligned techniques. Due to this nano-scale technology, the cell pitch of the trench-gate MOSFET could be reduced to 3.0 μm, which resulted in an increase in the cell density and in current driving capability. By reducing masks to four layers, a cost-effective process was available. The self-aligned technique also permits a narrow width of the trench gate on the scale of 300 nm. The fabricated device exhibits a specific on-resistance of 1.4 m廓쨌cm2 for a breakdown voltage of 114.8 V. Moreover, the long-term gate oxide's integrity was improved by adopting corner rounding and hydrogen annealing technologies.
- KSP Keywords
- Breakdown Voltage, Cell density, Corner rounding, Field Effect Transistor(FET), Gate oxide, High-density, Hydrogen annealing, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), Nano-Scale, Novel process