상세정보
학술지
A Low-Temperature-Grown TiO2-Based Device for the Flexible Stacked RRAM Application
- 발행일
- 201002
- 출처
- Nanotechnology, v.21 no.11, pp.1-6
- ISSN
- 0957-4484
- 출판사
- Institute of Physics (IOP)
- 협약과제
- 08IB2300, 고신뢰성 charge complex 소재 탐색, 최성율
- 초록
- Flexible TiO2 crossbar memory device arrays were fabricated on plastic substrates using amorphous titanium oxide thin films grown by the low-temperature plasma-enhanced atomic layer deposition method. Al/ TiO 2 /Al memory cells on polyethersulfone(PES) showed an enhanced endurance property (up to 104cycles) and low switching voltages compared to the cells on rigid substrates. The multi-stacked memory arrays were constructed by forming the additional Al/ TiO2 /Al layer on the first memory device layer. Memory cells on each layer exhibited stable switching characteristics and mechanical robustness without interlayer cell-to-cell interference. © 2010 IOP Publishing Ltd.
- KSP 제안 키워드
- Al layer, Amorphous titanium oxide, Atomic layer deposition method, Crossbar memory, Device arrays, Endurance property, Low temperature(LT), Memory Array, Oxide thin films, Plastic substrate, Stable switching