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A Low-Temperature-Grown TiO2-Based Device for the Flexible Stacked RRAM Application
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- Authors
- Hu Young Jeong, Yong In Kim, Jeong Yong Lee, Sung-Yool Choi
- Issue Date
- 2010-02
- Citation
- Nanotechnology, v.21, no.11, pp.1-6
- ISSN
- 0957-4484
- Publisher
- Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- Flexible TiO2 crossbar memory device arrays were fabricated on plastic substrates using amorphous titanium oxide thin films grown by the low-temperature plasma-enhanced atomic layer deposition method. Al/ TiO 2 /Al memory cells on polyethersulfone(PES) showed an enhanced endurance property (up to 104cycles) and low switching voltages compared to the cells on rigid substrates. The multi-stacked memory arrays were constructed by forming the additional Al/ TiO2 /Al layer on the first memory device layer. Memory cells on each layer exhibited stable switching characteristics and mechanical robustness without interlayer cell-to-cell interference. © 2010 IOP Publishing Ltd.
- KSP Keywords
- Al layer, Amorphous titanium oxide, Atomic layer deposition method, Crossbar memory, Device arrays, Endurance property, Memory Array, Oxide thin films, Plastic substrate, Stable switching, Stacked Memory