상세정보
학술지
Anti-crossing Effect and Optimization of Waveguide Structure in InGaN/GaN/AlGaN Laser Diode on Sapphire Substrate
- 발행일
- 201603
- 출처
- Current Applied Physics, v.16 no.3, pp.371-377
- ISSN
- 1567-1739
- 출판사
- Elsevier
- 협약과제
- 15MB1200, 소프트웨어 정의 네트워크(SDN) 기반 Flexible 광노드 핵심기술 개발, 권용환
- 초록
- For optimization of the waveguide in an InGaN/GaN/AlGaN laser diode (LD) on a sapphire substrate, we solved the wave equation of the InGaN/GaN/AlGaN waveguide. Several guided modes in the LD waveguide have been presented and we have shown that an anti-crossing effect between the guided modes is an important phenomenon to understand the complicated behaviour of the modes in the LD waveguide under the variation of structure parameters. By systematically varying the widths of the waveguides of the LD waveguide, we can obtain a useful design category to obtain a high optical confinement factor and a low absorption coefficient for high performance of the LD on a sapphire substrate.
- KSP 제안 키워드
- Absorption Coefficient, Crossing effect, Guided modes, High performance, Laser diode(LD), Sapphire substrates, Waveguide Structure, optical confinement factor, structure parameters, wave equation