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Conference Paper
BCD Technology with an integrated Trench Gate MOSFET for Smart Power IC
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- Authors
- Jongil Won, Jingun Koo, Kunsik Park, Doohyung Cho, Sanggi Kim
- Issue Date
- 2016-01
- Citation
- International Conference on Electronics, Information and Communication (ICEIC) 2016, pp.745-746
- Language
- English
- Type
- Conference Paper
- Abstract
- In this paper, we present a new Bipolar-CMOS-DMOS (BCD) technology that is integrated with a trench gate DMOS (TDMOS) on a single chip. An integration of power function (TDMOS) and control/analog IC function (CMOS, BJT) is performed through a junction isolation technique using two epitaxial growths. BCD devices with a thick gate oxide (BVGS=23V) have been successfully integrated in a single chip. The isolation breakdown voltage of 65V has been obtained, which is larger than the blocking voltage of power block. The trench-gate DMOS has a specific on-resistance of 20mΩ and a forward blocking voltage of 54.8V.
- KSP Keywords
- Analog IC, BCD Technology, Bipolar-CMOS-DMOS(BCD), Breakdown Voltage, Gate oxide, Isolation technique, Junction isolation, Power block, Power function, Single chip, Smart Power IC