상세정보
학술지
Voltage-induced Current-Jump Assisted by Infrared or Temperature in p-Type GaAs
- 발행일
- 201012
- 출처
- Journal of the Korean Physical Society, v.57 no.61, pp.1769-1772
- ISSN
- 0374-4884
- 출판사
- 한국물리학회
- 초록
- Epitaxial Be-doped GaAs thin films with hole concentrations of 3.0 × 1016 cm-3 and 5.0 × 1016 cm-3 were deposited on GaAs (001) substrates by solid-source molecular beam epitaxy. An energy gap of GaAs of 1.3 eV was observed by photoluminance. Devices fabricated by the thin films showed abrupt current-jumps and an Ohmic behavior indicating a metal-insulator transition after the jump. The current-jump voltage decreases as the temperature or the infrared intensity increases, which indicates that the devices can be used as a programmable critical temperature sensors.
- KSP 제안 키워드
- Critical temperature, Energy gap, Gaas thin films, Infrared intensity, Molecular beam epitaxy(MBE), Ohmic behavior, Solid-source molecular beam epitaxy, induced current, metal-insulator transition, p-Type, temperature sensor(LM35)