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Journal Article
Voltage-induced Current-Jump Assisted by Infrared or Temperature in p-Type GaAs
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- Authors
- Sungyoul Choi, Bong-Jun Kim, Jeongyong Choi, Hyun-Tak Kim, Yong Wook Lee, Gi Wan Seo
- Issue Date
- 2010-12
- Citation
- Journal of the Korean Physical Society, v.57, no.61, pp.1769-1772
- ISSN
- 0374-4884
- Publisher
- 한국물리학회
- Language
- English
- Type
- Journal Article
- Abstract
- Epitaxial Be-doped GaAs thin films with hole concentrations of 3.0 × 1016 cm-3 and 5.0 × 1016 cm-3 were deposited on GaAs (001) substrates by solid-source molecular beam epitaxy. An energy gap of GaAs of 1.3 eV was observed by photoluminance. Devices fabricated by the thin films showed abrupt current-jumps and an Ohmic behavior indicating a metal-insulator transition after the jump. The current-jump voltage decreases as the temperature or the infrared intensity increases, which indicates that the devices can be used as a programmable critical temperature sensors.
- KSP Keywords
- Critical temperature, Gaas thin films, Infrared intensity, Molecular beam epitaxy(MBE), Ohmic behavior, Solid-source molecular beam epitaxy, energy gap, induced current, metal-insulator transition, p-Type, temperature sensor(LM35)