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10 Gbps Colorless Optical Source in Wavelength-Division Multiplexed Passive Optical Networks for Monolithic Integration of Deep-Ridge Waveguide Electroabsorption Modulator with Planar Buried-Heterostructure Semiconductor Optical Amplifier
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- Authors
- Dong Churl Kim, Ki Soo Kim, Hyun-Soo Kim, Byung-Seok Choi, O-Kyun Kwon
- Issue Date
- 2012-04
- Citation
- Japanese Journal of Applied Physics, v.51, no.5 PART 1, pp.1-3
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP),
- Language
- English
- Type
- Journal Article
- Abstract
- For the 10 Gbps colorless optical source in wavelength-division multiplexed passive optical networks (WDM-PONs), we have fabricated a semiconductor optical amplifier-reflective electorabsorption modulator (SOA-REAM) by monolithic integration of deep-ridge waveguide REAM (DRW-REAM) with planar buried-heterostructure (PBH) SOA using a PNP-current blocking layer. The SOA-REAM has a spot-size convertor for easy fiber coupling. Using a butterfly module with an SMA connector, we have packaged the SOA-REAM. At a-10dBm input power of 1550 nm, the saturation output power is about 6 dBm. At 10.7 Gbps, we can obtain clear eye diagrams, and the power penalty at 10 -9 bit-error rate (BER) after 20 km transmission is less than 1 dB over 35 nm. © 2012 The Japan Society of Applied Physics.
- KSP Keywords
- 1550 nm, 5 nm, Applied physics, Bit-error-rate(BER), Current blocking layer, Deep ridge waveguide, Eye Diagram, Fiber Coupling, Input power, Monolithic Integration, Output power