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학술지 10 Gbps Colorless Optical Source in Wavelength-Division Multiplexed Passive Optical Networks for Monolithic Integration of Deep-Ridge Waveguide Electroabsorption Modulator with Planar Buried-Heterostructure Semiconductor Optical Amplifier
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저자
김동철, 김기수, 김현수, 최병석, 권오균
발행일
201204
출처
Japanese Journal of Applied Physics, v.51 no.5 PART 1, pp.1-3
ISSN
0021-4922
출판사
Japan Society of Applied Physics (JSAP),
DOI
https://dx.doi.org/10.1143/JJAP.51.050204
협약과제
11VB1500, 액세스 네트워크용 광집적기반 OLT서브모듈 플랫폼 개발, 권오균
초록
For the 10 Gbps colorless optical source in wavelength-division multiplexed passive optical networks (WDM-PONs), we have fabricated a semiconductor optical amplifier-reflective electorabsorption modulator (SOA-REAM) by monolithic integration of deep-ridge waveguide REAM (DRW-REAM) with planar buried-heterostructure (PBH) SOA using a PNP-current blocking layer. The SOA-REAM has a spot-size convertor for easy fiber coupling. Using a butterfly module with an SMA connector, we have packaged the SOA-REAM. At a-10dBm input power of 1550 nm, the saturation output power is about 6 dBm. At 10.7 Gbps, we can obtain clear eye diagrams, and the power penalty at 10 -9 bit-error rate (BER) after 20 km transmission is less than 1 dB over 35 nm. © 2012 The Japan Society of Applied Physics.
KSP 제안 키워드
1550 nm, 5 nm, Applied physics, Bit-error-rate(BER), Current blocking layer, Deep ridge waveguide, Eye Diagram, Fiber Coupling, Input power, Monolithic Integration, Output power