상세정보
학술지
Light-soaking Effects and Capacitance Profiling in Cu(In,Ga)Se2 Thin-film Solar Cells with Chemical-bath-deposited ZnS Buffer Layers
- 발행일
- 201612
- 출처
- Physical Chemistry Chemical Physics, v.2016 no.48, pp.33211-33217
- ISSN
- 1463-9076
- 출판사
- Royal Society of Chemistry (RSC)
- 협약과제
- 16PB2200, 초경량 유연 CIGS 박막 모듈 공정장비 상용화 기술개발, 정용덕
- 초록
- We fabricated Cu(In,Ga)Se2 (CIGS) solar cells with chemical-bath deposited (CBD) ZnS buffer layers with different deposition times. The conversion efficiency and the fill factor of the CIGS solar cells reveal a strong dependence on the deposition time of CBD-ZnS films. In order to understand the detailed relationship between the heterojunction structure and the electronic properties of CIGS solar cells with different deposition times of CBD-ZnS films, capacitance-voltage (C-V) profiling measurements with additional laser illumination were performed. The light-soaking effects on CIGS solar cells with a CBD-ZnS buffer layer were investigated in detail using current density-voltage (J-V) and C-V measurements with several different lasers with different emission wavelengths. After light-soaking, the conversion efficiency changed significantly and the double diode feature in J-V curves disappeared. We explain that the major reason for the improvement of efficiency by light-soaking is due to the fact that negatively charged and highly defective vacancies in the CIGS absorber near the interface of CBD-ZnS/CIGS were formed and became neutral due to carriers generated by ultra-violet absorption in the buffer layer.
- KSP 제안 키워드
- C-V measurements, CIGS absorber, CIGS solar cell, Capacitance profiling, Capacitance-voltage, Computer Vision(CV), Conversion efficiency(C.E.), Current density-voltage, Deposition time, Double diode, Electronic properties