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학술대회 High Performance Back Channel Etch Metal Oxide Thin-film Transistor with Double Active Layers
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저자
양종헌, 최지훈, 피재은, 김희옥, 박은숙, 권오상, 남수지, 조성행, 유승협, 황치선
발행일
201605
출처
Society for Information Display (SID) International Symposium 2016, pp.1151-1154
DOI
https://dx.doi.org/10.1002/sdtp.10840
협약과제
15PB2200, 8G용 UD 디스플레이급 고이동도 고신뢰성 산화물 TFT 확보를 위한 급속 광소결 장비 기술 개발, 양종헌
초록
We fabricated high performance back channel etch (BCE) IZO/AIZTO double-layer channel oxide thin-film transistors (TFTs) and analyzed their electrical characteristics and photo-stability of the devices. The field-effect mobility of 53.2 cm2/Vs was obtained, and we expect IZO/AIZTO double-layer BCE TFT can be used as a backplane devices for next generation high performance display applications.
KSP 제안 키워드
Active Layer, Display applications, Double layer, High performance, Metal-oxide(MOX), Thin-Film Transistor(TFT), back channel, electrical characteristics, field-effect mobility, oxide thin-film transistors, photo-stability