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Conference Paper
P-9: High Performance Back Channel Etch Metal Oxide Thin-film Transistor with Double Active Layers
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- Authors
- Jong-Heon Yang, Ji Hun Choi, Jae-Eun Pi, Hee-Ok Kim, Eun-Suk Park, Oh-Sang Kwon, Sooji Nam, Sung Haeng Cho, Seunghyup Yoo, Chi-Sun Hwang
- Issue Date
- 2016-05
- Citation
- Society for Information Display (SID) International Symposium 2016, pp.1151-1154
- Language
- English
- Type
- Conference Paper
- Abstract
- We fabricated high performance back channel etch (BCE) IZO/AIZTO double-layer channel oxide thin-film transistors (TFTs) and analyzed their electrical characteristics and photo-stability of the devices. The field-effect mobility of 53.2 cm2/Vs was obtained, and we expect IZO/AIZTO double-layer BCE TFT can be used as a backplane devices for next generation high performance display applications.
- KSP Keywords
- Active Layer, Display applications, Double layer, Electrical characteristics, High performance, Metal-oxide(MOX), Thin-Film Transistor(TFT), back channel, field-effect mobility, oxide thin-film transistors, photo-stability