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학술대회
Double-Channel Oxide Semiconductor Vertical TFTs with Mo Source/Drain Layer
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- 발행일
- 201612
- 출처
- International Display Workshops in conjunction with Asia Display (IDW/AD) 2016, pp.274-276
- 협약과제
- 16MF1400, 디지털 홀로그래픽 테이블탑형 단말 기술 개발, 김진웅
- 초록
- Vertical channel oxide semiconductor TFT was fabricated with convention metal source/drain layer, sputtered active layer and PECVD deposited gate insulator. Double-channel active structure was adopted for preventing non-ohmic contact resistance between active layer and metal source/drain layer. This structure is desirable for applying VTFTs to display panel with large area.
- KSP 제안 키워드
- Active Layer, Active Structure, Contact resistance(73.40.Cg), Display Panel, Gate insulator, Ohmic contact resistance, Oxide semiconductor, Vertical channel, double-channel, large area, metal source/drain(S/D)