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Conference Paper
Double-Channel Oxide Semiconductor Vertical TFTs with Mo Source/Drain Layer
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- Authors
- Chi-Sun Hwang, Ji Hun Choi, Sung Haeng Cho, Jong-Heon Yang, Jae-Eun Pi, Oh-Sang Kwon, Eun-Suk Park, Hee-Ok Kim, Sang-Hee Ko Park
- Issue Date
- 2016-12
- Citation
- International Display Workshops in conjunction with Asia Display (IDW/AD) 2016, pp.274-276
- Language
- English
- Type
- Conference Paper
- Abstract
- Vertical channel oxide semiconductor TFT was fabricated with convention metal source/drain layer, sputtered active layer and PECVD deposited gate insulator. Double-channel active structure was adopted for preventing non-ohmic contact resistance between active layer and metal source/drain layer. This structure is desirable for applying VTFTs to display panel with large area.
- KSP Keywords
- Active Layer, Active Structure, Contact resistance(73.40.Cg), Display Panel, Ohmic contact resistance, Vertical channel, double-channel, gate insulator, large area, metal source/drain(S/D), oxide semiconductor