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The Effect of n-type Window Layer on the Performance of Amorphous Si:H Thin Film Solar Cells
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- Authors
- Kwang Hoon Jung, Seong Hyun Lee, Yoo Jeong Lee, Kyu-Sung Lee, Jung Wook Lim, R.E.I. Schropp, Sun Jin Yun
- Issue Date
- 2016-07
- Citation
- International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1
- Language
- English
- Type
- Conference Paper
- Abstract
- Typical substrate-type hydrogenated amorphous silicon (a-Si:H) thin film solar cells have been fabricated to have p-type window layer with n-i-p deposition sequence (Fig. 1(a)) on opaque substrates using multi-chamber PECVD systems. Earlier works have reported that using the p-side as a window is advantageous compared to the n-side because holes are the minority carrier in intrinsic (i-) a-Si:H films, and therefore the hole collection efficiency is limiting the solar cell conversion efficiency. PECVD i-Si:H is commonly slightly n-type, and multi chamber PECVD should be used to deposit n-i-p layers in sequence in order to protect i-Si:H from further contamination by n-type dopant in typical substrate-type a-Si:H solar cells. But, n-type window (p-i-n sequence deposition in a single chamber PECVD system) would be more beneficial if substantial i-Si:H or slightly p-type Si:H light absorbing layers are deposited.
- KSP Keywords
- Absorbing layer, Collection efficiency, Conversion efficiency(C.E.), Hydrogenated amorphous silicon, Minority carrier, Multi-chamber, P-i-n, PECVD system, Single chamber, Thin film solar cells, a-Si:H films