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Journal Article
Design and Evaluation of Cascode GaN FET for Switching Power Conversion Systems
- Authors
- Dong Yun Jung, Youngrak Park, Hyun Soo Lee, Chi Hoon Jun, Hyun Gyu Jang, Junbo Park, Minki Kim, Sang Choon Ko, Eun Soo Nam
- Issue Date
- 2017-02
- Citation
- ETRI Journal, v.39, no.1, pp.62-68
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- In this paper, we present the design and characterization analysis of a cascode GaN field-effect transistor (FET) for switching power conversion systems. To enable normally-off operation, a cascode GaN FET employs a low breakdown voltage (BV) enhancement-mode Si metal-oxide-semiconductor FET and a high-BV depletion-mode (D-mode) GaN FET. This paper demonstrates a normallyon D-mode GaN FET with high power density and high switching frequency, and presents a theoretical analysis of a hybrid cascode GaN FET design. A TO-254 packaged FET provides a drain current of 6.04 A at a drain voltage of 2 V, a BV of 520 V at a drain leakage current of 250 μA, and an on-resistance of 331 m廓. Finally, a boost converter is used to evaluate the performance of the cascode GaN FET in power conversion applications.
- KSP Keywords
- Boost Converter(BC), Breakdown Voltage, Cascode GaN FET, Design evaluation, Drain current, Drain leakage current, Drain voltage, Enhancement mode(E-mode), Field Effect Transistor(FET), High Power density, High Switching Frequency
This work is distributed under the term of Korea Open Government License (KOGL)
(Type 4: : Type 1 + Commercial Use Prohibition+Change Prohibition)
(Type 4: : Type 1 + Commercial Use Prohibition+Change Prohibition)
