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Conference Paper
Total Ionizing Dose Effects on GaN-based HEMTs and MOSHEMTs: Effects of Channel Thickness and Epitaxial MgCaO as Gate Dielectric
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- Authors
- M. Bhuiyan, H. Zhou, S.-J. Chang, X. Lou, X. Gong, K. Ni, R. Jiang, H. Gong, E. X. Zhang, C.-H. Won, R. G. Gordon, J.-W. Lim, J.-H. Lee, R. A. Reed, D. M. Fleetwood, P. Ye, T. P. Ma
- Issue Date
- 2016-12
- Citation
- Semiconductor Interface Specialists Conference (SISC) 2016, pp.1-2
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- Channel thickness, GaN-Based, Total ionizing dose effects, gate dielectric