BROWSE
Detail
Conference Paper
Normally-off AlGaN/GaN Field Effect Transistors with Recessed Gate using Ultra-low Rate Dry Etching Conditions
Cited - time in 
Share 
Share
- Authors
- Zin-Sig Kim, Hyung-Seok Lee, Jeho Na, Sung-Bum Bae, Eunsoo Nam, Jong-Won Lim
- Issue Date
- 2017-02
- Citation
- 한국 반도체 학술 대회 (KCS) 2017, pp.1-1
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- Etching conditions, Field Effect Transistor(FET), Low-rate, Normally-Off, dry etching, recessed gate