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학술지 A New Method of Measuring Localized Chromatic Dispersion of Structured Nanowaveguide Devices Using White-Light Interferometry
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저자
김동욱, 김승환, 이성헌, 김경헌, 이종무, 이일항
발행일
201201
출처
IEEE/OSA Journal of Lightwave Technology, v.30 no.1, pp.43-48
ISSN
0733-8724
출판사
IEEE, OSA
DOI
https://dx.doi.org/10.1109/JLT.2011.2177638
초록
We report on a simple and direct method of measuring localized chromatic dispersion (CD) profiles of structured nanowaveguide devices using white-light interferometry. Phase change in the interference fringe of a white-light interferometer (WLI) caused by introducing a sample-under-test into one of the interferometer arms was used to determine a spectral profile of its accurate CD coefficients. This method was tested by measuring the spectral CD profiles of a localized silicon nanowaveguide and of a nonmembrane-type photonic crystal waveguide (PhCW) excluding their optical coupling sections. The measured local CD values of a 500-nm-wide single-line-defect (W1) PhCW with a lattice period of 460 nm and the hole radius of 165 nm formed on 220-nm-thick silicon layer of a silicon-on-insulator (SOI) wafer varied from 0.38 to 0.22 ps/(nm쨌cm) for a wavelength range from 1530 to 1570 nm. This method will be very useful in determining the accurate CD profiles of nanophotonic waveguide devices. © 2006 IEEE.
KSP 제안 키워드
460 nm, 65 nm, Chromatic dispersion(CD), Interference fringe, Optical coupling, Phase change, Photonic crystal waveguides, Silicon On Insulator(SOI), Silicon layer, Simple and direct, Thick silicon