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A New Method of Measuring Localized Chromatic Dispersion of Structured Nanowaveguide Devices Using White-Light Interferometry
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- Authors
- Dong Wook Kim, Seung Hwan Kim, Seoung Hun Lee, Kyong Hon Kim, Jong-Moo Lee, El-Hang Lee
- Issue Date
- 2012-01
- Citation
- IEEE/OSA Journal of Lightwave Technology, v.30, no.1, pp.43-48
- ISSN
- 0733-8724
- Publisher
- IEEE, OSA
- Language
- English
- Type
- Journal Article
- Abstract
- We report on a simple and direct method of measuring localized chromatic dispersion (CD) profiles of structured nanowaveguide devices using white-light interferometry. Phase change in the interference fringe of a white-light interferometer (WLI) caused by introducing a sample-under-test into one of the interferometer arms was used to determine a spectral profile of its accurate CD coefficients. This method was tested by measuring the spectral CD profiles of a localized silicon nanowaveguide and of a nonmembrane-type photonic crystal waveguide (PhCW) excluding their optical coupling sections. The measured local CD values of a 500-nm-wide single-line-defect (W1) PhCW with a lattice period of 460 nm and the hole radius of 165 nm formed on 220-nm-thick silicon layer of a silicon-on-insulator (SOI) wafer varied from 0.38 to 0.22 ps/(nm쨌cm) for a wavelength range from 1530 to 1570 nm. This method will be very useful in determining the accurate CD profiles of nanophotonic waveguide devices. © 2006 IEEE.
- KSP Keywords
- 460 nm, 65 nm, Chromatic dispersion(CD), Interference fringe, Optical coupling, Phase change, Photonic crystal waveguides, Silicon On Insulator(SOI), Silicon layer, Simple and direct, Thick silicon