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학술대회 Ka-band GaN Power Amplifier MMIC Chipset for Satellite and 5G Cellular Communications
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노윤섭, 최윤호, 염인복
Asia-Pacific Conference on Antennas and Propagation (APCAP) 2015, pp.482-485
14DR1400, Ka대역 GaN MMIC 기반 SSPA 개발 , 노윤섭
Ka-band gallium nitride (GaN) power amplifier monolithic microwave integrated circuits (MMICs) with 2 W driver Amplifier (DRA) MMIC and 8 W high power amplifier (HPA) MMIC have been developed. These MMICs are demonstrated using a 0.15 um GaN high electron mobility transistor (HEMT) technology on silicon carbide (SiC) substrate. At 28 GHz, the three-stage DRA MMIC in-fixture exhibits 25.8 dB of small signal gain and 33.1 dBm of continuous wave (CW) output power, which is sufficient to drive a HPA MMIC. The three-stage HPA MMIC achieves 23.5 dB of small signal gain, a CW output power of 39 dBm, and power added efficiency (PAE) of 26.6% at 28 GHz. The chip areas of the DRA MMIC and HPA MMIC are 4.08 mm2 and 11.22 mm2, respectively.
Gallium Nitride (GaN), high electron mobility transistor (HEMT), high power amplifier (HPA), Ka-band, monolithic microwave integrated circuit (MMIC)
KSP 제안 키워드
2 mm, 28 GHz, 5G Cellular Communications, Cellular Communication(GSM), Driver Amplifier, GaN power amplifier, High electron mobility transistor(HEMT), High power amplifier(HPA), Microwave monolithic integrated circuits(MMIC), Output power, Power added efficiency(PAE)