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학술대회 Ka-band GaN Power Amplifier MMIC Chipset for Satellite and 5G Cellular Communications
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저자
노윤섭, 최윤호, 염인복
발행일
201507
출처
Asia-Pacific Conference on Antennas and Propagation (APCAP) 2015, pp.482-485
DOI
https://dx.doi.org/10.1109/APCAP.2015.7374447
협약과제
14DR1400, Ka대역 GaN MMIC 기반 SSPA 개발 , 노윤섭
초록
Ka-band gallium nitride (GaN) power amplifier monolithic microwave integrated circuits (MMICs) with 2 W driver Amplifier (DRA) MMIC and 8 W high power amplifier (HPA) MMIC have been developed. These MMICs are demonstrated using a 0.15 um GaN high electron mobility transistor (HEMT) technology on silicon carbide (SiC) substrate. At 28 GHz, the three-stage DRA MMIC in-fixture exhibits 25.8 dB of small signal gain and 33.1 dBm of continuous wave (CW) output power, which is sufficient to drive a HPA MMIC. The three-stage HPA MMIC achieves 23.5 dB of small signal gain, a CW output power of 39 dBm, and power added efficiency (PAE) of 26.6% at 28 GHz. The chip areas of the DRA MMIC and HPA MMIC are 4.08 mm2 and 11.22 mm2, respectively.
키워드
Gallium Nitride (GaN), high electron mobility transistor (HEMT), high power amplifier (HPA), Ka-band, monolithic microwave integrated circuit (MMIC)
KSP 제안 키워드
2 mm, 28 GHz, 5G Cellular Communications, Cellular Communication(GSM), Driver Amplifier, GaN power amplifier, High electron mobility transistor(HEMT), High power amplifier(HPA), Microwave monolithic integrated circuits(MMIC), Output power, Power added efficiency(PAE)