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Flexible Nonvolatile Memory Transistors using Indium Gallium Zinc Oxide-channel and Ferroelectric Polymer Poly(Vinylidene Fluoride-co-Trifluoroethylene) Fabricated on Elastomer Substrate
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- Authors
- Soon-Won Jung, Jae Bon Koo, Chan Woo Park, Bock Soon Na, Ji-Young Oh, Sang Seok Lee, Kyung-Wan Koo
- Issue Date
- 2015-09
- Citation
- Journal of Vacuum Science and Technology B, v.33, no.5, pp.1-4
- ISSN
- 1071-1023
- Publisher
- American Vacuum Society (AVS)
- Language
- English
- Type
- Journal Article
- Abstract
- The authors demonstrated flexible memory thin-film transistors (MTFTs) with organic ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) and an amorphous oxide semiconducting indium gallium zinc oxide channel on the elastomer substrates. The carrier mobility, memory on/off ratio, and subthreshold swing of the flexible MTFTs showed 21cm2V-1s-1, 107, and 0.5-1V/decade, respectively. The memory window of 13V at 짹20V programming was confirmed for the device without any interface layer. These obtained values did not significantly change when the substrate was bent with a radius of curvature of 10mm. The memory on/off ratio was initially 5×104 and maintained at 102 even after a lapse of 3600s. The fabricated MTFTs exhibited encouraging characteristics on the elastomer that are sufficient to realize mechanically flexible nonvolatile memory devices.
- KSP Keywords
- Amorphous oxide, Carrier mobility, Flexible nonvolatile memory, Indium gallium zinc oxide, Non-Volatile Memory(NVM), Nonvolatile memory devices, Oxide channel, Radius of curvature, Thin-Film Transistor(TFT), Zinc oxide(ZnO), elastomer substrate