상세정보
학술지
Flexible Nonvolatile Memory Transistors using Indium Gallium Zinc Oxide-channel and Ferroelectric Polymer Poly(Vinylidene Fluoride-co-Trifluoroethylene) Fabricated on Elastomer Substrate
- 발행일
- 201509
- 출처
- Journal of Vacuum Science and Technology B, v.33 no.5, pp.1-4
- ISSN
- 1071-1023
- 출판사
- American Vacuum Society (AVS)
- 협약과제
- 15MB1600, 미래광고 서비스를 위한 에너지절감형 환경적응 I/O (Input/Output) 플랫폼 기술 개발, 황치선
- 초록
- The authors demonstrated flexible memory thin-film transistors (MTFTs) with organic ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) and an amorphous oxide semiconducting indium gallium zinc oxide channel on the elastomer substrates. The carrier mobility, memory on/off ratio, and subthreshold swing of the flexible MTFTs showed 21cm2V-1s-1, 107, and 0.5-1V/decade, respectively. The memory window of 13V at 짹20V programming was confirmed for the device without any interface layer. These obtained values did not significantly change when the substrate was bent with a radius of curvature of 10mm. The memory on/off ratio was initially 5×104 and maintained at 102 even after a lapse of 3600s. The fabricated MTFTs exhibited encouraging characteristics on the elastomer that are sufficient to realize mechanically flexible nonvolatile memory devices.
- KSP 제안 키워드
- Amorphous oxide, Carrier mobility, Flexible nonvolatile memory, Indium gallium zinc oxide, Non-Volatile Memory(NVM), Nonvolatile memory devices, Oxide channel, Radius of curvature, Thin-Film Transistor(TFT), Zinc oxide(ZnO), elastomer substrate