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학술지 Highly Integrated C-Band GaN High Power Amplifier MMIC for Phased Array Applications
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저자
노윤섭, 염인복
발행일
201506
출처
IEEE Microwave and Wireless Components Letters, v.25 no.6, pp.406-408
ISSN
1531-1309
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LMWC.2015.2421316
협약과제
14MR3100, 차기위성 Flexible 통신방송 탑재체 핵심기술 개발, 안재영
초록
A C-band high-power and high power added efficiency (PAE) high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) fabricated by using 0.25 μm gallium nitride (GaN) high electron mobility transistor (HEMT) technology has been developed for phased array antennas. The MMIC operates in pulse conditions of 100 μs pulse width and 10% of duty cycle over the frequency from 5.2 to 6.8 GHz. The MMIC exhibits an output power of 45.7 dBm to 46.4 dBm and a power added efficiency (PAE) of 51.5% to 56.5% under a drain voltage of 30 V. The MMIC size is as small as 12.54 mm2, generating an output power density up to 3.48 W/mm2 over the chip area and up to 4.55 W/mm over the active periphery.
키워드
C-band, high electron mobility transistor (HEMT), high power amplifier (HPA), monolithic microwave integrated circuit (MMIC)
KSP 제안 키워드
C-band, Chip area, Drain voltage, Duty cycle(DC), High electron mobility transistor(HEMT), High power amplifier(HPA), Microwave monolithic integrated circuits(MMIC), Output power density, Power added efficiency(PAE), Power amplifier MMIC, microwave integrated circuit