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Top-Down Processed Silicon Nanowires for Thermoelectric Applications
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- Authors
- Moongyu Jang, Youngsam Park, Younghoon Hyun, Myungsim Jun, Sung-Jin Choi, Taehyung Zyung, Jong-Dae Kim
- Issue Date
- 2012-06
- Citation
- Journal of Nanoscience and Nanotechnology, v.12, no.4, pp.3552-3554
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP),
- Language
- English
- Type
- Journal Article
- Abstract
- 50 nm wide n-type silicon nanowires have been manufactured by using a top-down process in order to investigate the thermoelectric properties of silicon nanowire. Nanowire test structures with platinum heaters and temperature sensors were fabricated. The extracted temperature coefficient of resistance (TCR) of the temperature sensors was 786.6 PPM/K. Also, the extracted Seebeck coefficient and power factor of the 50 nm wide phosphorus doped n-type silicon nanowires were -118 μV/K and 2.16 mW쨌K -2 쨌m -1. © 2012 American Scientific Publishers.
- KSP Keywords
- Power factor(P.F), Seebeck coefficient, Silicon nanowires(SiNWs), Test structures, n-Type silicon, temperature coefficient of resistance(TCR), temperature sensor(LM35), thermoelectric applications, thermoelectric properties, top-down process