상세정보
학술지
Top-Down Processed Silicon Nanowires for Thermoelectric Applications
- 발행일
- 201206
- 출처
- Journal of Nanoscience and Nanotechnology, v.12 no.4, pp.3552-3554
- ISSN
- 1533-4880
- 출판사
- American Scientific Publishers (ASP),
- 협약과제
- 11ZE1100, ETRI 연구역량 강화를 위한 R&D체계 구축 및 Seed형 기술개발을 위한 창의형 연구 사업, 지경용
- 초록
- 50 nm wide n-type silicon nanowires have been manufactured by using a top-down process in order to investigate the thermoelectric properties of silicon nanowire. Nanowire test structures with platinum heaters and temperature sensors were fabricated. The extracted temperature coefficient of resistance (TCR) of the temperature sensors was 786.6 PPM/K. Also, the extracted Seebeck coefficient and power factor of the 50 nm wide phosphorus doped n-type silicon nanowires were -118 μV/K and 2.16 mW쨌K -2 쨌m -1. © 2012 American Scientific Publishers.
- KSP 제안 키워드
- Power factor(P.F), Seebeck coefficient, Silicon nanowires(SiNWs), Test structures, n-Type silicon, temperature coefficient of resistance(TCR), temperature sensor(LM35), thermoelectric applications, thermoelectric properties, top-down process