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Journal Article Top-Down Processed Silicon Nanowires for Thermoelectric Applications
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Authors
Moongyu Jang, Youngsam Park, Younghoon Hyun, Myungsim Jun, Sung-Jin Choi, Taehyung Zyung, Jong-Dae Kim
Issue Date
2012-06
Citation
Journal of Nanoscience and Nanotechnology, v.12, no.4, pp.3552-3554
ISSN
1533-4880
Publisher
American Scientific Publishers (ASP),
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1166/jnn.2012.5580
Abstract
50 nm wide n-type silicon nanowires have been manufactured by using a top-down process in order to investigate the thermoelectric properties of silicon nanowire. Nanowire test structures with platinum heaters and temperature sensors were fabricated. The extracted temperature coefficient of resistance (TCR) of the temperature sensors was 786.6 PPM/K. Also, the extracted Seebeck coefficient and power factor of the 50 nm wide phosphorus doped n-type silicon nanowires were -118 μV/K and 2.16 mW쨌K -2 쨌m -1. © 2012 American Scientific Publishers.
KSP Keywords
Power factor(P.F), Seebeck coefficient, Silicon nanowires(SiNWs), Test structures, n-Type silicon, temperature coefficient of resistance(TCR), temperature sensor(LM35), thermoelectric applications, thermoelectric properties, top-down process