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학술대회
Fabrication of GaN HEMT on SiC with Taper-Shaped Backside Via-Hole
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- 발행일
- 201412
- 출처
- International Symposium Physics of Semiconductors and Applications (ISPSA) 2014, pp.80-80
- 협약과제
- 13VB5900, SW기반 디지털 무선통신용 핵심 모듈 및 트랜시버 개발, 윤형섭
- 초록
- SiC substrates and GaN/AlGaN epitaxial layers were etched by using an inductively-coupled plasma (ICP) in order to electrically connect the backside metal to the source electrode pads on the front-side of an AlGaN/GaN high-electron-mobility transistor (HEMT) device. The shape of an etched via hole was a tapered cylinder with a larger diameter at the entrance. The surfaces on the bottom and a wall of the via hole were very smooth in comparison with the results on the most recently published papers. Through optimization of the etching conditions, the etch-stops on the GaN epi-layer and on the source pad were successfully completed. The electrical properties of the device with the backside via holes were not critically different from those of the device without the backside via holes. In this paper, the fabrication process and the electrical properties of AlGaN/GaN HEMTs on SiC substrates with taper-shaped backside via holes are reported for the first time.
- KSP 제안 키워드
- AlGaN/GaN HEMTs, Epitaxial layer, Etching conditions, Front-side, High electron mobility transistor(HEMT), Inductively-coupled plasma(ICP), Via-hole, electrical properties(I-V curve), fabrication process