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AlGaN/GaN HEMT 소자 제작에서 게이트 리세스 공정 개선에 의한 소자 DC 특성의 변화
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- Issue Date
- 2015-06
- Citation
- 대한전자공학회 종합 학술 대회 (하계) 2015, pp.192-195
- Publisher
- 대한전자공학회
- Language
- Korean
- Type
- Conference Paper
- Abstract
- In the fabrication of AlGaN/GaN HEMT on SiC, it is critical to establish a stable process condition of a gate recess. In this study, we etched the AlGaN layer by a low-energy ICP with variations of etch times. In addition, HC1 treatment followed the etch step. The 2-times process of SiN deposition and etch was tried to reduce the gate length by mis-aligned lithography. A proportional relationship between Vth(or Gm) and recess etch depth was identified. There also was a surface-improving effect to reduce the leakage current by HC1 treatment.
- KSP Keywords
- AlGaN/GaN HEMTs, Etch depth, Gate recess, Leakage Current, Low energy, Process conditions, SiN deposition, Stable process, gate length, recess etch