BROWSE
Detail
Journal Article
Current Stress Induced Electrical Instability in Transparent Zinc Tin Oxide Thin-Film Transistors
Cited 18 time in 
Share 
Share
- Authors
- Woo-Seok Cheong, Jae-Heon Shin, Sung Mook Chung, Chi-Sun Hwang, Jeong-Min Lee, Jong-Ho Lee
- Issue Date
- 2012-04
- Citation
- Journal of Nanoscience and Nanotechnology, v.12, no.4, pp.3421-3424
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP),
- Language
- English
- Type
- Journal Article
- Abstract
- Transparent zinc tin oxide thin-film transistors (ZTO-TFTs) [Zn: Sn = 4:1~2:1] have been fabricated so as to estimate the electrical instability under constant current stress. The relative intensity of the drain current noise power spectra density has been shown to have a typical 1/f -noise character, and it is implied that the mobility fluctuation in ZTO-TFT [Zn: Sn=4:1] can be enhanced by a short-range ordering in amorphous Zn-CSn-Coxide, causing a larger shift of the threshold voltage (?봙 th). © 2012 American Scientific Publishers.
- KSP Keywords
- Constant current(CC), Constant current stress, Drain current, Noise power, Power spectra density, Relative intensity, Short-range ordering, Thin-Film Transistor(TFT), Zinc Tin Oxide(ZTO), current noise, mobility fluctuation