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Journal Article Low Leakage Current AlGaN/GaN on Si-Based Schottky Barrier Diode with Bonding-Pad Electrode Mesa Etching
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Authors
Hyun-Gyu Jang, Jeho Na, Jung-Jin Kim, Young-Rak Park, Hyun-Soo Lee, Dong-Yun Jung, Jae-Kyoung Mun, Sang Choon Ko, Eun Soo Nam
Issue Date
2015-07
Citation
Japanese Journal of Applied Physics, v.54, no.7, pp.1-5
ISSN
0021-4922
Publisher
Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.7567/JJAP.54.070302
Abstract
Bonding-pad electrode-area-etched AlGaN/GaN on a Si-based Schottky barrier diode (SBD) is fabricated. Electrode mesa etching leads to reverse bias leakage current about one order of magnitude lower than that of SBD without electrode mesa etching, but forward currents do not vary greatly, compared with that in conventional SBD, which has no electrode mesa etching.
KSP Keywords
AlGaN/GaN-on-Si, MESA etching, Reverse bias, Si-based, low leakage current, schottky barrier diode(SBD)