BROWSE
Detail
Journal Article
Low Leakage Current AlGaN/GaN on Si-Based Schottky Barrier Diode with Bonding-Pad Electrode Mesa Etching
Cited 3 time in 
Share 
Share
- Authors
- Hyun-Gyu Jang, Jeho Na, Jung-Jin Kim, Young-Rak Park, Hyun-Soo Lee, Dong-Yun Jung, Jae-Kyoung Mun, Sang Choon Ko, Eun Soo Nam
- Issue Date
- 2015-07
- Citation
- Japanese Journal of Applied Physics, v.54, no.7, pp.1-5
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- Bonding-pad electrode-area-etched AlGaN/GaN on a Si-based Schottky barrier diode (SBD) is fabricated. Electrode mesa etching leads to reverse bias leakage current about one order of magnitude lower than that of SBD without electrode mesa etching, but forward currents do not vary greatly, compared with that in conventional SBD, which has no electrode mesa etching.
- KSP Keywords
- AlGaN/GaN-on-Si, MESA etching, Reverse bias, Si-based, low leakage current, schottky barrier diode(SBD)