상세정보
학술지
Low Leakage Current AlGaN/GaN on Si-Based Schottky Barrier Diode with Bonding-Pad Electrode Mesa Etching
- 발행일
- 201507
- 출처
- Japanese Journal of Applied Physics, v.54 no.7, pp.1-5
- ISSN
- 0021-4922
- 출판사
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- 협약과제
- 15MB1500, 스마트 데이터센터용 차세대 광-전 모듈 기술, 남은수
- 초록
- Bonding-pad electrode-area-etched AlGaN/GaN on a Si-based Schottky barrier diode (SBD) is fabricated. Electrode mesa etching leads to reverse bias leakage current about one order of magnitude lower than that of SBD without electrode mesa etching, but forward currents do not vary greatly, compared with that in conventional SBD, which has no electrode mesa etching.
- KSP 제안 키워드
- AlGaN/GaN-on-Si, MESA etching, Reverse bias, Si-based, low leakage current, schottky barrier diode(SBD)