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Size and Surface Modification Effects on the pH Response of Si Nanowire Field-Effect Transistors
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- Authors
- In-Bok Baek, Xianhong Li, Seongjae Lee, Chil Seong Ah, Jong-Heon Yang, Chan Woo Park, Tae-Youb Kim, Gun Yong Sung
- Issue Date
- 2012-07
- Citation
- Journal of Nanoscience and Nanotechnology, v.12, no.7, pp.5678-5682
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP),
- Language
- English
- Type
- Journal Article
- Abstract
- We investigated the effects of Si nanowire (SiNW) dimensions and their surface modi?cations on the pH-dependent electronic transport characteristics of SiNW Electrolyte-Insulator-Semiconductor Field-Effect Transistors (EISFETs). The threshold voltages, V th's, of all devices were extracted from the I d-V g characteristics with V g applied to the reference electrode immersed in different pH solutions, and their pH-dependences were analyzed for various devices. We found that our devices produce the systematic pH-dependence of V th with respect to the SiNW's length and show signi?cant changes in a linear pH region and a pH sensitivity upon the Si surface modi?cations. Particularly in the case of the APTES-treated surface, the linear variation was observed in the wide region of pH = 2~11 with the sensitivity of 54.7 짹 0.6 mV/pH. Also we compared our data to a theoretical result based on the Gouy-Chapmam-Stern-Graham model and found a reasonable agreement between them. © 2012 American Scientific Publishers.
- KSP Keywords
- Different pH, Electrolyte-insulator-semiconductor(EIS), Electronic Transport, Field-effect transistors(FETs), PH response, PH sensitivity, Si nanowires, Si surface, Transport characteristics, nanowire field-effect transistors, pH-dependence