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Journal Article Novel Low-Volume Solder-on-Pad Process for Fine Pitch Cu Pillar Bump Interconnection
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Authors
Hyun-Cheol Bae, Haksun Lee, Yong-Sung Eom, Kwang-Seong Choi
Issue Date
2015-06
Citation
한국마이크로전자 및 패키징학회지, v.22, no.2, pp.55-59
ISSN
1226-9360
Publisher
한국마이크로전자 및 패키징학회지
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.6117/kmeps.2015.22.2.055
Project Code
15ZB1400, ESSOP CUBE 기술 기반 차세대 레이더 3D 모듈 개발, Lee Jin Ho
Abstract
Novel low-volume solder-on-pad (SoP) process is proposed for a fine pitch Cu pillar bump interconnection.A novel solder bumping material (SBM) has been developed for the 60 μm pitch SoP using screen printing process. SBM, which is composed of ternary Sn-3.0Ag-0.5Cu (SAC305) solder powder and a polymer resin, is a paste material to perform a fine-pitch SoP in place of the electroplating process. By optimizing the volumetric ratio of the resin, deoxidizing agent, and SAC305 solder powder; the oxide layers on the solder powder and Cu pads are successfully removed during the bumping process without additional treatment or equipment. The Si chip and substrate with daisy-chain pattern are fabricated to develop the fine pitch SoP process and evaluate the fine-pitch interconnection. The fabricated Si substrate has 6724 under bump metallization (UBM) with a 45 μm diameter and 60 μm pitch. The Si chip with Cu pillar bump is flip chip bonded with the SoP formed substrate using an underfill material with fluxing features. Using the fluxing underfill material is advantageous since it eliminates the flux cleaning process and capillary flow process of underfill. The optimized interconnection process has been validated by the electrical characterization of the daisy-chain pattern. This work is the first report on a successful operation of a fine-pitch SoP and micro bump interconnection using a screen printing process.
KSP Keywords
Capillary flow, Cleaning process, Cu pillar bump, Electrical characterization, Electroplating process, Fine pitch, Oxide layer, Polymer resin, Screen printing process, Si substrate, Sn-3.0Ag-0.5Cu