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Effect of Curing Temperature on Nano-Silver Paste Ink for Organic Thin-Film Transistors
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- Authors
- Minseok Kim, Jae Bon Koo, Kang-Jun Baeg, Yong-Young Noh, Yong Suk Yang, Soon-Won Jung, Byeong-Kwon Ju, In-Kyu You
- Issue Date
- 2012-06
- Citation
- Journal of Nanoscience and Nanotechnology, v.12, no.4, pp.3272-3275
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP),
- Language
- English
- Type
- Journal Article
- Abstract
- Silver (Ag) metal electrode having 20 μm channel length was printed by reverse offset printing (ROP) using nano-silver paste ink for the source/drain of organic thin-film transistors (OTFT). Specific resistance and surface roughness of printed Ag electrodes with increasing curing temperature were investigated, and surface morphology and grain growth mechanism were systematically verified using a scanning electron microscope (SEM) and atomic force microscope (AFM) in order to obtain an optimized ROP Ag electrode. The Ag electrode was applied to fabricate top-gate/bottomcontact poly(3-hexylthiophene) OTFT devices, which showed reproducible OTFT characteristics such as the field-effect mobility, threshold voltage, and an on/off-current ratio of ~10~ 3 cm 2/Vs, 0.36 V, and ~10 2, respectively. © 2012 American Scientific Publishers.
- KSP Keywords
- Ag electrode, Atomic force microscope(AFM), Channel Length, Curing temperature, Growth Mechanism, Nano-silver, Regioregular poly(3-hexylthiophene), Silver Paste, Surface roughness, Thin-Film Transistor(TFT), field-effect mobility