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학술지 Effect of Curing Temperature on Nano-Silver Paste Ink for Organic Thin Film Transistors
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저자
김민석, 구재본, 백강준, 노용영, 양용석, 정순원, 주병권, 유인규
발행일
201206
출처
Journal of Nanoscience and Nanotechnology, v.12 no.4, pp.3272-3275
ISSN
1533-4880
출판사
American Scientific Publishers (ASP),
DOI
https://dx.doi.org/10.1166/jnn.2012.5639
초록
Silver (Ag) metal electrode having 20 μm channel length was printed by reverse offset printing (ROP) using nano-silver paste ink for the source/drain of organic thin-film transistors (OTFT). Specific resistance and surface roughness of printed Ag electrodes with increasing curing temperature were investigated, and surface morphology and grain growth mechanism were systematically verified using a scanning electron microscope (SEM) and atomic force microscope (AFM) in order to obtain an optimized ROP Ag electrode. The Ag electrode was applied to fabricate top-gate/bottomcontact poly(3-hexylthiophene) OTFT devices, which showed reproducible OTFT characteristics such as the field-effect mobility, threshold voltage, and an on/off-current ratio of ~10~ 3 cm 2/Vs, 0.36 V, and ~10 2, respectively. © 2012 American Scientific Publishers.
KSP 제안 키워드
3-hexylthiophene(SEM poly), Ag electrode, Atomic force microscope(AFM), Channel Length, Curing temperature, Nano-silver, ON/OFF current ratio, Organic thin-film transistors, Silver Paste, Surface roughness, Thin-Film Transistor(TFT)