15MB1800, Development of High Efficiency GaN-based Key Components and Modules for Base and Mobile Stations,
Jong-Won Lim
Abstract
This paper describes the successful development and the performance of X-band 40 W pulsed power amplifier using a 40 W GaN-on-SiC High Electron Mobility Transistor(HEMT). The GaN HEMT with a gate length of 0.25 ㎛ and a total gate width of 12 mm were fabricated. The GaN HEMT provide a linear gain of 6 dB with 42 W output power operated at 30V drain voltage in pulse operation with a pulse width 100 ㎲ and 10 % duty cycle at X-band. It also shows a maximum output power density of 3.3 W/mm. The X-band pulsed power amplifier exhibited an output power of 42 W(46.2 dBm) with a power gain of 6 dB in a frequency range of 9.2 - 9.5 GHz.. This 40 W GaN HEMT and X-band 40 W pulsed power amplifier are suitable for the radar systems and related applications in X-band.
KSP Keywords
2 mm, 9.5 GHZ, Drain voltage, Duty cycle(DC), Frequency Range, GaN HEMT, GaN-on-SiC HEMT, Gate Width, High electron mobility transistor(HEMT), Output power density, Power gain
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