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Organic Nonvolatile Memory Devices Fabricated by Using an Inkjet Printing Method
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- Authors
- Yong Suk Yang, Jae Bon Koo, In-Kyu You
- Issue Date
- 2012-05
- Citation
- Journal of the Korean Physical Society, v.60, no.10, pp.1504-1507
- ISSN
- 0374-4884
- Publisher
- 한국물리학회
- Language
- English
- Type
- Journal Article
- Abstract
- We are developing inkjet printing as a low cost, high throughput approach to the fabrication of single-layer organic memory devices. The organic memory devices were composed of a poly (Nvinylcarbazole) (PVK) film with Ag nanoparticles (NPs). The inkjet printing was introduced to embed Ag NPs in the PVK film. The organic memory devices exhibited the behavior of a resistive random access memory and on/off switching ratios of 10 3. This value was obtained through postannealing at 150 °C. The current-voltage characteristics of the devices revealed rewritable and bipolar memory effects during several sweeps of the voltage. © 2012 The Korean Physical Society.
- KSP Keywords
- Ag NPS, Ag nanoparticles, High throughput(HTP), Low-cost, Memory effect, Non-Volatile Memory(NVM), Nonvolatile memory devices, PVK film, Printing method, Resistive Random Access Memory(RRAM), Single-layer