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학술지 Interface Characteristics of CdS/Cu(In,Ga)Se2 Thin-Film Solar Cells by Using Photoreflectance Spectroscopy
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저자
정용덕, 조대형, 최해원, 이규석, 안병준, 송정훈, 김제하
발행일
201211
출처
한국물리학회, v.61 no.10, pp.1623-1627
ISSN
0374-4884
출판사
한국물리학회
DOI
https://dx.doi.org/10.3938/jkps.61.1623
초록
We investigated the CdS/Cu(In,Ga)Se2 interface characteristics of Cu(In,Ga)Se2 (CIGS) thin-film solar cells by using photoreflectance spectroscopy and their influence on the photovoltaic performance. We prepared CIGS solar cells with CdS and CIGS layers fabricated by using different methods of chemical bath deposition (CBD). The thiourea concentration in the CBD-CdS process was varied from 0. 025 M to 0. 1 M. The final In-Ga-Se deposition time for the CIGS film's deposition was varied from 300 s to 490 s. We fabricated solar cells with thin films fabricated by using a combination of these conditions. The transition energies changed from 2. 277 eV to 2. 387 eV and the conversion efficiencies changed from 14. 13% to 15. 81% depending on the fabrication process. The formation of different states in CdS/CIGS resulted in different conversion efficiencies, as well as different band alignments at the CdS/CIGS interface. © 2012 The Korean Physical Society.
키워드
CdS, Chemical bath deposition, Cu(In,Ga)Se 2, Photoreflectance spectroscopy
KSP 제안 키워드
CIGS film, CIGS solar cell, CdS/CIGS interface, Chemical bath deposition(CBD), Conversion efficiency(C.E.), Deposition time, Different methods, Interface characteristics, Photoreflectance spectroscopy, Thin film solar cells, Thiourea concentration