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Two-Step Selenization of Cu-In-Ga Precursors for CIGS Thin-Film Solar Cells by Using a Se Cracker
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- Authors
- Ho-Sub Lee, Nae-Man Park, Kyu-Seok Lee, Jeha Kim, Ho-Jung Chang
- Issue Date
- 2012-05
- Citation
- Journal of the Korean Physical Society, v.60, no.10, pp.1753-1756
- ISSN
- 0374-4884
- Publisher
- 한국물리학회
- Language
- English
- Type
- Journal Article
- Abstract
- Cu(In 1-xGa x)Se 2 (CIGS) thin-film solar cells have been fabricated using the CIGS compound prepared with a two-step selenization process at 400 °C followed by successive thermal annealing at 550 °C. The compositions of the Cu-In-Ga precursors were controlled by changing the thickness ratio of the Cu-In and the Cu-Ga films. After the selenization, the thickness of the CIGS film was approximately three times that of the precursor layer. X-ray diffraction peaks showed that the CIGS had the chalcopyrite structure with a preferential orientation in the (112) direction. The composition analysis using X-ray fluorescence revealed that the Cu/[III] and the Ga/[III] ratios of CIGS changed in ranges of 0.66 ~ 0.80 and 0.11 ~ 0.20, respectively, with variations in the precursor thickness. We obtained a power conversion efficiency of 3.91% from the fabricated CIGS solar cell. © 2012 The Korean Physical Society.
- KSP Keywords
- CIGS film, CIGS solar cell, Chalcopyrite structure, Conversion efficiency(C.E.), Diffraction peaks, Precursor layer, Preferential orientation, Selenization process, Thermal annealing, Thickness ratio, Thin film solar cells