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Conference Paper
Surface Passivation Oxide Study of 4H-SiC Bipolar Junction Transistors
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- Authors
- Hyung-Seok Lee, Martin Domeij, Carl-Mikael Zetterling, Mikael Ostling, Sang Choon Ko, Eun Soo Nam
- Issue Date
- 2015-02
- Citation
- 한국 반도체 학술 대회 (KCS) 2015, pp.193-193
- Language
- Korean
- Type
- Conference Paper
- KSP Keywords
- 4H-SiC, Surface passivation, bipolar junction transistor(BJT)