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Radiation damage of multipixel Geiger-mode avalanche photodiodes irradiated with low-energy γ’s and electrons
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- Authors
- Y. Kwon, Y. B. Yun, J. M. Ha, J. S. Lee, Y. S. Yoon, J. W. Eun
- Issue Date
- 2012-05
- Citation
- Journal of the Korean Physical Society, v.60, no.10, pp.1803-1808
- ISSN
- 0374-4884
- Publisher
- 한국물리학회
- Language
- English
- Type
- Journal Article
- Abstract
- A few types of multipipixel Geiger-mode avalanche photodiodes (also referred to as silicon photomultipliers SiPMs) are irradiated with 1 to 2.5 MeV 款's and electrons. We characterize radiation damage effects appearing in the reverse bias current, the dark current and count rate, the pixel gain, and the photon detection efficiency of the devices. An interesting observation on the dark current and count rate is made and linked to the specific damage caused by the irradiation. © 2012 The Korean Physical Society.
- KSP Keywords
- Avalanche photo diode(APD), Dark Current, Geiger-mode avalanche photodiodes, Low energy, Radiation damage, Reverse bias, Silicon photomultiplier(SiPM), bias current, photon detection efficiency(PDE)