상세정보
학술지
Photoreflectance Characteristics of Chemical-Bath-Deposited-CdS Layer in Cu(In,Ga)Se2 Thin-Film Solar Cells
- 발행일
- 201207
- 출처
- Journal of Vacuum Science and Technology A, v.30 no.4, pp.1-6
- ISSN
- 0734-2101
- 출판사
- American Vacuum Society (AVS),
- 협약과제
- 11MB5700, 황화방법을 이용한 버퍼층 건식제조기술 개발 (총괄:대면적(900×1600㎟) 고효율(16%) CIGS 박막태양전지, 정용덕
- 초록
- The authors have characterized the CdS layer in Cu(In,Ga)Se 2 thin-film solar cells using photoreflectance (PR) spectroscopy and investigated its influence on the photovoltaic performance. The CdS layer was fabricated by chemical bath deposition with various concentrations of ammonia (1.0-3.0 M), thiourea (0.025-0.1 M), and Cd-salt (0.0004-0.003 M) as well as various thicknesses (30-90 nm). The PR transition energy in CdS increased from 2.282 to 2.366 eV as the thiourea concentration increased from 1.0 to 3.0 M, whereas it decreased as the thickness of CdS increased. The conversion efficiency depended on neither the ammonia and the Cd-salt concentrations nor the thickness of CdS, whereas it changed from 14.72% to 15.81% as the thiourea concentration decreases from 3.0 to 1.0 M. © 2012 American Vacuum Society.
- KSP 제안 키워드
- Chemical bath deposition(CBD), Conversion efficiency(C.E.), Thin film solar cells, Thiourea concentration, Transition energy, photovoltaic performance, thin film(TF)