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Journal Article
Effect of In-Ga-Zn-O Active Layer Channel Composition on Process Temperature for Flexible Oxide Thin-film Transistors
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- Authors
- Jun Yong Bak, Sung Min Yoon, Shinhyuk Yang, Gi Heon Kim, Sang-Hee Ko Park, Chi-Sun Hwang
- Issue Date
- 2012-06
- Citation
- Journal of Vacuum Science and Technology B, v.30, no.4, pp.1-5
- ISSN
- 1071-1023
- Publisher
- American Vacuum Society (AVS),
- Language
- English
- Type
- Journal Article
- Abstract
- In-Ga-Zn-O (IGZO)-channel oxide thin-film transistors (TFTs) were fabricated on flexible polyethylene naphthalate (PEN) substrates. A lamination and delamination procedure was established that allowed easy handling of the PEN substrate during fabrication. In order to fabricate high-performance flexible IGZO TFTs at lower than normal process temperatures, a 2:1:2 (In:Ga:Zn) IGZO channel composition was proposed. The field-effect mobility, threshold voltage, and subthreshold swing of the fabricated IGZO TFTs were found to be approximately 7.83 cm2 V-1 s-1, 1.93 V, and 0.24 V/decade, respectively, even when a final heat treatment was conducted at a temperature as low as 150 °C. The stability characteristics of the devices were also examined under gate bias stress and constant current stress conditions. © 2012 American Vacuum Society.
- KSP Keywords
- 3 V, Active Layer, Constant current(CC), Constant current stress, Final heat treatment, First Stokes(S1), Gate bias stress, High performance, IGZO TFTs, In-Ga-Zn-O(IGZO), Normal process