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A Simplified Circuit Model for GaN-Based MIM Capacitor
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- 발행일
- 201504
- 출처
- Information : An International Interdisciplinary Journal, v.18 no.4, pp.1249-1254
- ISSN
- 1343-4500
- 출판사
- International Information Institute
- 협약과제
- 15ZB1400, ESSOP CUBE 기술 기반 차세대 레이더 3D 모듈 개발, 이진호
- 초록
- In general, physical model of a MIM capacitor can be represented by lumped elements to characterize parallel plate capacitance and parasitic components. In this paper, a simplified equivalent circuit for GaN-based MIM capacitor has been developed, eliminating lossy transmission line between top electrode and air-bridge and capacitive coupling between input and output ports. The simulated results by the simplified circuit model for GaN-based MIM capacitor are compared with results measured from GaN-based MIM capacitors on SiC substrate in the frequency range of 0.5 to 10 GHz. ISSN 1343-4500
- KSP 제안 키워드
- 10 Ghz, Capacitive Coupling, Equivalent Circuit, Frequency Range, GaN-Based, Lossy transmission line, MIM capacitor, Parallel-plate, Physical model, SiC substrate, Simplified circuit model