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A Simplified Circuit Model for GaN-Based MIM Capacitor
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- Authors
- Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn, Byoung-Gue Min, Jong-Won Lim
- Issue Date
- 2015-04
- Citation
- Information : An International Interdisciplinary Journal, v.18, no.4, pp.1249-1254
- ISSN
- 1343-4500
- Publisher
- International Information Institute
- Language
- English
- Type
- Journal Article
- Abstract
- In general, physical model of a MIM capacitor can be represented by lumped elements to characterize parallel plate capacitance and parasitic components. In this paper, a simplified equivalent circuit for GaN-based MIM capacitor has been developed, eliminating lossy transmission line between top electrode and air-bridge and capacitive coupling between input and output ports. The simulated results by the simplified circuit model for GaN-based MIM capacitor are compared with results measured from GaN-based MIM capacitors on SiC substrate in the frequency range of 0.5 to 10 GHz. ISSN 1343-4500
- KSP Keywords
- 10 Ghz, Capacitive Coupling, Equivalent Circuit, Frequency range, GaN-Based, Input-Output, Lossy transmission line, MIM capacitor, Parallel-plate, Physical model, SiC substrate