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Characteristics of NiO–AZO thin films deposited by magnetron co-sputtering in an O2 atmosphere
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- Authors
- H.W. Park, J.H. Bang, K.N. Hui, P.K. Song, W.S. Cheong, B.S. Kang
- Issue Date
- 2012-12
- Citation
- Materials Letters, v.74, pp.30-32
- ISSN
- 0167-577X
- Publisher
- North-Holland
- Language
- English
- Type
- Journal Article
- Abstract
- NiO-AZO thin films were prepared by DC and RF magnetron co-sputtering (MCS) system in an O 2 atmosphere. The lowest resistivity of 1.75 × 10 - 1 廓 cm was obtained in the film containing 1.94 mol% Al. The I-V measurements of the p-n junction ((NiO-AZO)/ITO) revealed rectifying characteristics, demonstrating that the film possess p-type conductivity. These results showed good agreement with the X-ray photoelectron spectroscopy (XPS) data by the higher bond enthalpy of Ni-O (382 짹 16.7 kJ/mol) than Zn-O (159 짹 4 kJ/mol). Moreover, the NiO-AZO films had a higher work function than NiO, highlighting the potential applications of transparent contact electrodes in Gallium nitride LEDs. © 2012 Elsevier B.V. All rights reserved.
- KSP Keywords
- AZO film, AZO thin films, Bond enthalpy, Contact electrodes, Gallium Nitride, I-V measurement, Initialization Vector(IV), O 2, P-N junction, Petri net(PN), Potential applications