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학술지 Insulating Oxide Buffer Layer Formed by Sol-Gel Method for Planarization of Stainless Steel Substrate of a-Si:H Thin Film Solar Cell
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저자
윤선진, 이유정, 임정욱, 윤정희, 백제훈, 김경보, 박영준
발행일
201204
출처
Materials Research Bulletin, v.47 no.10, pp.3044-3047
ISSN
0025-5408
출판사
Pergamon
DOI
https://dx.doi.org/10.1016/j.materresbull.2012.04.129
협약과제
11MB7300, 유연성 철강소재기판상에서 효율13%를 갖는 Si/SiGe 탠덤 박막태양전지개발, 윤선진
초록
The planarization of flexible stainless steel (SS) foils was investigated for the application of flexible solar cells. The sol-gel SiO 2 film containing nanoparticles was evaluated for a buffer layer on SS foils, and methods to improve the adhesion of SiO 2 film to SS foil were studied. The improvement of adhesion by adding Al 2O 3 matrix was discussed by analyzing the interface between Al 2O 3- SiO 2 film and SS foil. The usefulness of sol-gel buffer layer was also verified by comparing the performance of single junction a-Si:H thin film solar cells fabricated on bare SS foil and buffer layer-coated SS foil. The cell characteristics such as V oc, J sc, fill factor, and efficiency were all improved by adopting the buffer layer. The efficiency of the cell on buffer layer-coated and non-textured SS foil was 6.1% whereas the efficiency was 4.9% on bare SS foil. © 2012 Elsevier Ltd. All rights reserved.
키워드
A. Inorganic compounds, A. Interfaces, B. Sol-gel chemistry, C. Photoelectron spectroscopy, D. Surface properties
KSP 제안 키워드
Inorganic compounds, J sc, O 3, Open circuit voltage(VOC), Oxide buffer layer, SiO 2, Single junction, Stainless steel(SUS316), Stainless steel substrate, a-Si:H thin film solar cell, fill factor