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Insulating oxide buffer layer formed by sol–gel method for planarization of stainless steel substrate of a-Si:H thin film solar cell
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- Authors
- Sun Jin Yun, Yoo Jeong Lee, Jung Wook Lim, Joung Hee Yun, Jehoon Baek, Kyoung Bo Kim, Young Jun Park
- Issue Date
- 2012-04
- Citation
- Materials Research Bulletin, v.47, no.10, pp.3044-3047
- ISSN
- 0025-5408
- Publisher
- Pergamon
- Language
- English
- Type
- Journal Article
- Abstract
- The planarization of flexible stainless steel (SS) foils was investigated for the application of flexible solar cells. The sol-gel SiO 2 film containing nanoparticles was evaluated for a buffer layer on SS foils, and methods to improve the adhesion of SiO 2 film to SS foil were studied. The improvement of adhesion by adding Al 2O 3 matrix was discussed by analyzing the interface between Al 2O 3- SiO 2 film and SS foil. The usefulness of sol-gel buffer layer was also verified by comparing the performance of single junction a-Si:H thin film solar cells fabricated on bare SS foil and buffer layer-coated SS foil. The cell characteristics such as V oc, J sc, fill factor, and efficiency were all improved by adopting the buffer layer. The efficiency of the cell on buffer layer-coated and non-textured SS foil was 6.1% whereas the efficiency was 4.9% on bare SS foil. © 2012 Elsevier Ltd. All rights reserved.
- KSP Keywords
- Gel method, J sc, O 3, Open circuit voltage(VOC), Oxide buffer layer, SiO 2, Single junction, Sol-Gel, Stainless steel(SUS316), Stainless steel substrate, a-Si:H thin film solar cell