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Label-Free and Real-Time Immunodetection of the Avian Influenza A Hemagglutinin Peptide Using a Silicon Field-Effect Transistor Fabricated by a Nickel Self-Aligned Silicide Process
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- Authors
- Hyobong Hong, Yang-Kyu Park, Jae-Yeon Kim, Kibong Song, Chel-Jong Choi
- Issue Date
- 2012-12
- Citation
- Materials Transactions, v.53, no.9, pp.1633-1637
- ISSN
- 1345-9678
- Publisher
- JAPAN INST METALS
- Language
- English
- Type
- Journal Article
- Abstract
- Electrical immunodetection of the avian influenza A (H5N1) hemagglutinin (HA) peptide, the IN peptide, with anti-HA antibody was demonstrated using a field-effect transistor (FET) with an n-type silicon (Si) channel and a nickel (Ni) self-aligned silicide source/drain that was fabricated by a conventional top-down process. The specific binding of the IN peptide with anti-HA antibody in phosphate buffered saline (PBS) occurs on the patterned SiO 2 surface through covalent linkage. Positive ions in the buffer create majority carriers in the n-type Si channel, leading to a rapid increase in current across that channel. However, specific binding of the negatively charged antigens on the SiO 2 surface overlaying the Si channel results in the reduction of electrons induced in the Si channel by the positive ions, causing a significant decrease in the channel current. The settling time for obtaining a stable signal change, driven by the negatively charged antigens bound to antibody, extrapolates to approximately 32 s. © 2012 The Japan Institute of Metals.
- KSP Keywords
- Avian Influenza, Channel current, Covalent linkage, Field-effect transistors(FETs), Influenza A hemagglutinin(HA), Label-Free, Negatively charged, Positive ions, Real-Time, Si channel, SiO 2