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High Q Microwave Inductors in CMOS Double-Metal Technology and Its Substrate Bias Effects for 2 GHz RF ICs Application
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- Authors
- Min Park, Cheon Soo Kim, Jong Moon Park, Hyun Kyu Yu, Kee Soo Nam
- Issue Date
- 1997-12
- Citation
- IEEE Electron Device Meeting (IEDM) 1997, pp.59-62
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- This paper presents the high quality factor (Q) microwave inductors (up to 20) fabricated on high-resistivity substrate with thick-metal layer integrated by using only CMOS double-metal interconnection technology for 2 GHz RF ICs applications. The quality factor Q of 20.1 at 3.25 GHz for 11.9 nH-inductor has been achieved. And we first report the low-loss substrate bias technique to improve the Q of inductors.
- KSP Keywords
- 5 GHz, High resistivity, Low loss, Quality factor(VSWR and Q), Quality factor Q, RF IC, Substrate bias effects, high quality factor, metal layer