상세정보
학술대회
High Q Microwave Inductors in CMOS Double-Metal Technology and Its Substrate Bias Effects for 2 GHz RF ICs Application
Cited 24 time in 
Download 2 time
Share 
Download 2 time
Share
- 발행일
- 199712
- 출처
- IEEE Electron Device Meeting (IEDM) 1997, pp.59-62
- 협약과제
- 97MM2200, 실리콘 RF 집적회로 소자기술 연구, 유현규
- 초록
- This paper presents the high quality factor (Q) microwave inductors (up to 20) fabricated on high-resistivity substrate with thick-metal layer integrated by using only CMOS double-metal interconnection technology for 2 GHz RF ICs applications. The quality factor Q of 20.1 at 3.25 GHz for 11.9 nH-inductor has been achieved. And we first report the low-loss substrate bias technique to improve the Q of inductors.
- KSP 제안 키워드
- 5 GHz, High quality factor, High resistivity, Quality-factor(Q-factor), RF IC, Substrate bias effects, low loss, metal layer