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CuOx/a-Si:H Heterojunction Thin-Film Solar Cell with an N-Type uc-Si:H Depletion-Assisting Layer
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- Authors
- Seong Hyun Lee, Myunhun Shin, Sun Jin Yun, Jung Wook Lim
- Issue Date
- 2015-11
- Citation
- Progress in Photovoltaics : Research and Applications, v.23, no.11, pp.1642-1648
- ISSN
- 1062-7995
- Publisher
- John Wiley & Sons
- Language
- English
- Type
- Journal Article
- Abstract
- The development of CuOx thin films with n-type conduction properties allows us to successfully fabricate n-CuOx/intrinsic hydrogenated amorphous silicon (i-a-Si:H) heterojunction solar cells (HSCs) for the first time. A highly n-doped hydrogenated microcrystalline Si (n-μc-Si:H) layer was employed as a depletion-assisting layer to further improve the performance of n-CuOx/i-a-Si:H HSCs. This new application of the CuOx thin film could lead to further progress in various heterojunction solar cells and realization of colours for BIPV windows
- KSP Keywords
- Conduction properties, Heterojunction solar cells(SHJ), Microcrystalline Si, Thin film solar cells, a-Si:H, highly N-doped, intrinsic hydrogenated amorphous silicon, n-Type conduction, thin film(TF)