상세정보
학술지
CuOx/a-Si:H Heterojunction Thin-Film Solar Cell with an N-Type uc-Si:H Depletion-Assisting Layer
- 발행일
- 201511
- 출처
- Progress in Photovoltaics : Research and Applications, v.23 no.11, pp.1642-1648
- ISSN
- 1062-7995
- 출판사
- John Wiley & Sons
- 협약과제
- 13MB2100, 유연성 철강소재기판상에서 효율13%를 갖는 Si/SiGe 탠덤 박막태양전지개발, 윤선진
- 초록
- The development of CuOx thin films with n-type conduction properties allows us to successfully fabricate n-CuOx/intrinsic hydrogenated amorphous silicon (i-a-Si:H) heterojunction solar cells (HSCs) for the first time. A highly n-doped hydrogenated microcrystalline Si (n-μc-Si:H) layer was employed as a depletion-assisting layer to further improve the performance of n-CuOx/i-a-Si:H HSCs. This new application of the CuOx thin film could lead to further progress in various heterojunction solar cells and realization of colours for BIPV windows
- KSP 제안 키워드
- Conduction properties, Heterojunction solar cells, Microcrystalline Si, Thin film solar cells, a-Si:H, highly N-doped, intrinsic hydrogenated amorphous silicon, n-type conduction, thin film(TF)