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CuOx/a-Si:H Heterojunction Thin-Film Solar Cell with an N-Type uc-Si:H Depletion-Assisting Layer
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- Authors
- Seong Hyun Lee, Myunhun Shin, Sun Jin Yun, Jung Wook Lim
- Issue Date
- 2015-11
- Citation
- Progress in Photovoltaics : Research and Applications, v.23, no.11, pp.1642-1648
- ISSN
- 1062-7995
- Publisher
- John Wiley & Sons
- Language
- English
- Type
- Journal Article
- Abstract
- We showed that thin n-type CuOx films can be deposited by radio-frequency magnetron reactive sputtering and demonstrated the fabrication of n-CuOx/intrinsic hydrogenated amorphous silicon (i-a-Si:H) heterojunction solar cells (HSCs) for the first time. A highly n-doped hydrogenated microcrystalline Si (n-µc-Si:H) layer was introduced as a depletion-assisting layer to further improve the performance of n-CuOx/i-a-Si:H HSCs. An analysis of the external quantum efficiency and energy-band diagram showed that the thin depletion-assisting layer helped establish sufficient depletion and increased the built-in potential in the n-CuOx layer. The fabricated HSC exhibited a high open-circuit voltage of 0.715 V and an efficiency of 4.79%.
- KSP Keywords
- Band diagram, Built-in potential, External Quantum Efficiency, Heterojunction solar cells(SHJ), High open circuit voltage, Magnetron reactive sputtering, Microcrystalline Si, Open circuit voltage(OCV), Radio-frequency, Thin film solar cells, a-Si:H