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Journal Article Important Role of Polymorphs of Organic Semiconductors on the Reduction of the Current Leakage in an Organic Capacitor
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Authors
Jin-Hyuk Bae, Ye-Sul Jeong, Jaehoon Park
Issue Date
2012-09
Citation
Molecular Crystals and Liquid Crystals, v.567, no.1, pp.57-6286
ISSN
1542-1406
Publisher
Taylor & Francis
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1080/15421406.2012.702383
Abstract
Leakage currents in two different capacitors, metal-insulator-metal (MIM) and metal-insulator-semiconductor-metal (MISM), are examined. The leakage current of the MIM capacitors with a Nylon6-TiO 2 nanocomposite film was larger than that for the devices with a poly(4-vinylphenol) (PVP) buffer layer stacked on top of the composite film by a factor of 3.6. When the organic active layer of pentacene is introduced for the MISM capacitor, the reduction ratio of leakage current by stacking the PVP buffer layer onto the composite film is found to get more pronounced as much as about a factor of 25. Such a significant difference of reduction ratio for the leakage current between the MIM and MISM capacitors results from the different polymorphs of pentacene which are critically dictated by the morphological surface of the underlying layer. © 2012 Taylor & Francis Group, LLC.
KSP Keywords
4-vinyl phenol(Poly), Active Layer, Buffer layer, Current leakage, Leakage current, MIM capacitor, Metal-insulator-metal, Metal-insulator-semiconductor(MIS), Organic capacitor, Organic semiconductor, Reduction ratio