상세정보
학술지
Flexible Nonvolatile Organic Ferroelectric Memory Transistors Fabricated on Polydimethylsiloxane Elastomer
- 발행일
- 201501
- 출처
- Organic Electronics, v.16, pp.46-53
- ISSN
- 1566-1199
- 출판사
- Elsevier
- 협약과제
- 14MB1400, 미래광고 서비스를 위한 에너지절감형 환경적응 I/O (Input/Output) 플랫폼 기술 개발, 황치선
- 초록
- The flexible organic ferroelectric nonvolatile memory thin film transistors (OFMTs) were fabricated on polydimethylsiloxane (PDMS) elastomer substrates, in which an organic ferroelectric poly(vinylidene-trifluoroethylene) and an organic semiconducting poly(9,9-dioctylfluorene-co-bithiophene) layers were used as gate insulator and active channel, respectively. The carrier mobility, on/off ratio, and subthreshold swing of the OFMTs fabricated on PDMS showed 5 × 10-2 cm2 V-1 s-1, 7.5 × 103, and 2.5 V/decade, respectively. These obtained values did not markedly change when the substrate was bent with a radius of curvature of 0.6 cm. The memory on/off ratio was initially obtained to be 1.5 × 103 and maintained to be 20 even after a lapse of 2000 s. The fabricated OFMTs exhibited sufficiently encouraging device characteristics even on the PDMS elastomer to realize mechanically stretchable nonvolatile memory devices.
- KSP 제안 키워드
- Active channel, Carrier mobility, Device characteristics, First Stokes(S1), Gate insulator, Non-Volatile Memory(NVM), Nonvolatile memory devices, PDMS elastomer, Radius of curvature, Thin-Film Transistor(TFT), ferroelectric memory