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Journal Article Flexible Nonvolatile Organic Ferroelectric Memory Transistors Fabricated on Polydimethylsiloxane Elastomer
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Authors
Soon-Won Jung, Jeong-Seon Choi, Jae Bon Koo, Chan Woo Park, Bock Soon Na, Ji-Young Oh, Sang Chul Lim, Sang Seok Lee, Hye Yong Chu, Sung-Min Yoon
Issue Date
2015-01
Citation
Organic Electronics, v.16, pp.46-53
ISSN
1566-1199
Publisher
Elsevier
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1016/j.orgel.2014.08.051
Abstract
The flexible organic ferroelectric nonvolatile memory thin film transistors (OFMTs) were fabricated on polydimethylsiloxane (PDMS) elastomer substrates, in which an organic ferroelectric poly(vinylidene-trifluoroethylene) and an organic semiconducting poly(9,9-dioctylfluorene-co-bithiophene) layers were used as gate insulator and active channel, respectively. The carrier mobility, on/off ratio, and subthreshold swing of the OFMTs fabricated on PDMS showed 5 × 10-2 cm2 V-1 s-1, 7.5 × 103, and 2.5 V/decade, respectively. These obtained values did not markedly change when the substrate was bent with a radius of curvature of 0.6 cm. The memory on/off ratio was initially obtained to be 1.5 × 103 and maintained to be 20 even after a lapse of 2000 s. The fabricated OFMTs exhibited sufficiently encouraging device characteristics even on the PDMS elastomer to realize mechanically stretchable nonvolatile memory devices.
KSP Keywords
Active channel, Carrier mobility, Device characteristics, First Stokes(S1), Nonvolatile memory(NVM), Nonvolatile memory devices, ON/OFF ratio, PDMS elastomer, Thin-Film Transistor(TFT), ferroelectric memory, gate insulator