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Flexible Nonvolatile Organic Ferroelectric Memory Transistors Fabricated on Polydimethylsiloxane Elastomer
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- Authors
- Soon-Won Jung, Jeong-Seon Choi, Jae Bon Koo, Chan Woo Park, Bock Soon Na, Ji-Young Oh, Sang Chul Lim, Sang Seok Lee, Hye Yong Chu, Sung-Min Yoon
- Issue Date
- 2015-01
- Citation
- Organic Electronics, v.16, pp.46-53
- ISSN
- 1566-1199
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- The flexible organic ferroelectric nonvolatile memory thin film transistors (OFMTs) were fabricated on polydimethylsiloxane (PDMS) elastomer substrates, in which an organic ferroelectric poly(vinylidene-trifluoroethylene) and an organic semiconducting poly(9,9-dioctylfluorene-co-bithiophene) layers were used as gate insulator and active channel, respectively. The carrier mobility, on/off ratio, and subthreshold swing of the OFMTs fabricated on PDMS showed 5 × 10-2 cm2 V-1 s-1, 7.5 × 103, and 2.5 V/decade, respectively. These obtained values did not markedly change when the substrate was bent with a radius of curvature of 0.6 cm. The memory on/off ratio was initially obtained to be 1.5 × 103 and maintained to be 20 even after a lapse of 2000 s. The fabricated OFMTs exhibited sufficiently encouraging device characteristics even on the PDMS elastomer to realize mechanically stretchable nonvolatile memory devices.
- KSP Keywords
- Active channel, Carrier mobility, Device characteristics, First Stokes(S1), Nonvolatile memory(NVM), Nonvolatile memory devices, ON/OFF ratio, PDMS elastomer, Thin-Film Transistor(TFT), ferroelectric memory, gate insulator