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Journal Article Improvement of kink and beam steering characteristics of 0.98-μm GaInAs-GaInP high-power lasers utilizing channel ion implantation
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Authors
J.K. Lee, K.H. Park, D.H. Jang, H.S. Cho, E.S. Nam, K.E. Pyun, J. Jeong
Issue Date
2000-02
Citation
IEEE Photonics Technology Letters, v.12, no.2, pp.140-142
ISSN
1041-1135
Publisher
IEEE
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1109/68.823496
Abstract
We demonstrate a kink and beam steering free operation of 0.98-μm GaInAs-GaInP high-power ridge waveguide (RW) lasers utilizing channel ion implantation. The ion-implanted regions along the both sides of the ridge effectively suppressed the excitation of higher order lateral modes, which causes beam steering and kink. The maximum power without beam steering and kink has been achieved over 250 mW for channel ion-implanted RW lasers with 1.8-3.7-μm ridge width, compared to 120-mW maximum power without the channel ion implantation.
KSP Keywords
Higher-order, Ion Implantation, Steering characteristics, beam steering, high-power lasers, ion-implanted, maximum power, ridge waveguide, ridge width