상세정보
학술지
A semianalytical parameter extraction of a SPICE BSIM3v3 for RF MOSFET's using S-parameters
- 저자
- Seonghearn Lee, 유현규
- 발행일
- 200003
- 출처
- IEEE Transactions on Microwave Theory and Techniques, v.48 no.3, pp.412-416
- ISSN
- 0018-9480
- 출판사
- IEEE
- 협약과제
- 00MM1200, 2GHz대역 RF CMOS 집적회로 기술개발, 유현규
- 초록
- In this paper, we present a new parameter-extraction method combining analytical and optimization approaches for the RF large-signal Berkeley Short-Channel IGFET Model 3, Version 3.0. Using S-parameters of MOSFET's with different channel lengths and widths at zero gate bias, all overlap capacitances are accurately determined in the high-frequency range. The junction-capacitance model parameters are extracted using S1-parameter s of devices with different perimeter-to-area ratios at two different biases of zero and high voltages. A robust technique utilizing simple Z-parameter equations is also used to extract resistances (Rg and Rd) and inductances. The source and substrate resistances are initially determined using the zero-bias optimization, and their uncertainties are subsequently eliminated in the normal-bias optimization. Good agreements between measured and modeled S-parameters from 0.5 to 12 GHz demonstrate the validity of this semianalytical method. © 2000 IEEE.
- KSP 제안 키워드
- Bias optimization, Capacitance model, Extraction method, Frequency Range, High Frequency(HF), Model parameter, Short channel, Z-parameter, gate bias, large signal, parameter extraction