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A semianalytical parameter extraction of a SPICE BSIM3v3 for RF MOSFET's using S-parameters
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- Authors
- Seonghearn Lee, Hyun Kyu Yu
- Issue Date
- 2000-03
- Citation
- IEEE Transactions on Microwave Theory and Techniques, v.48, no.3, pp.412-416
- ISSN
- 0018-9480
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- In this paper, we present a new parameter-extraction method combining analytical and optimization approaches for the RF large-signal Berkeley Short-Channel IGFET Model 3, Version 3.0. Using S-parameters of MOSFET's with different channel lengths and widths at zero gate bias, all overlap capacitances are accurately determined in the high-frequency range. The junction-capacitance model parameters are extracted using S1-parameter s of devices with different perimeter-to-area ratios at two different biases of zero and high voltages. A robust technique utilizing simple Z-parameter equations is also used to extract resistances (Rg and Rd) and inductances. The source and substrate resistances are initially determined using the zero-bias optimization, and their uncertainties are subsequently eliminated in the normal-bias optimization. Good agreements between measured and modeled S-parameters from 0.5 to 12 GHz demonstrate the validity of this semianalytical method. © 2000 IEEE.
- KSP Keywords
- Bias optimization, Capacitance model, Extraction method, Frequency range, High frequency(HF), Model parameter, Short channel, Z-parameter, gate bias, large signal, parameter extraction