상세정보
학술지
Metal-Etching-Free Direct Delamination and Transfer of Single-Layer Graphene with a High Degree of Freedom
- 발행일
- 201501
- 출처
- Small, v.11 no.2, pp.175-181
- ISSN
- 1613-6810
- 출판사
- Wiley-Blackwell
- 초록
- (Figure Presented) A method of graphene transfer without metal etching is developed to minimize the contamination of graphene in the transfer process and to endow the transfer process with a greater degree of freedom. The method involves direct delamination of single-layer graphene from a growth substrate, resulting in transferred graphene with nearly zero Dirac voltage due to the absence of residues that would originate from metal etching. Several demonstrations are also presented to show the high degree of freedom and the resulting versatility of this transfer method.
- KSP 제안 키워드
- Degrees of freedom(DOF), High degree, Metal etching, Transfer method, etching-free, graphene transfer, single-layer graphene, transfer process