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Journal Article 1.55 ?m spot-size converter integrated-laser diode fabricated by selective-area metalorganic vapor-phase epitaxy
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Authors
Hyun-Soo Kim, Dae Kon Oh, Moon-Ho Park, Nam Hwang, In-Hoon Choi
Issue Date
2000-06
Citation
Microwave and Optical Technology Letters, v.25, no.5, pp.300-302
ISSN
0895-2477
Publisher
Wiley
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1002/(SICI)1098-2760(20000605)25:5<300::AID-MOP4>3.0.CO;2-S
Abstract
A 1.55 μm spot-size converter integrated-laser diode (SSC-LD) with a vertically tapered-thickness waveguide was fabricated by using selective-area metalorganic vapor-phase epitaxy (MOVPE). A tapered-thickness profile and PL wavelength shift as large as 238 nm in the waveguide were obtained by using an exponentially tapered shape mask. The SSC-LD exhibited a high slope efficiency of 0.31 W/A and a beam divergence 6.9째×12.4째 without facet coating. The coupling loss between the LD and SMF was measured to be 2.76 dB, and the 1 dB alignment tolerances were 짹2.4 μm for the horizontal direction, 짹2.0 μm for the vertical direction, and 13 μm for the longitudinal direction.
KSP Keywords
As 2, Beam Divergence, Coupling loss, High slope, Laser diode(LD), Longitudinal direction, Slope efficiency, Spot size converter(SSC), Thickness Profile, facet coating, selective-area metalorganic vapor-phase epitaxy