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학술지 1.55 μm spot-size converter integrated-laser diode fabricated by selective-area metalorganic vapor-phase epitaxy
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저자
김현수, 오대곤, 박문호, 황남, 최인훈
발행일
200006
출처
Microwave and Optical Technology Letters, v.25 no.5, pp.300-302
ISSN
0895-2477
출판사
Wiley
DOI
https://dx.doi.org/10.1002/(SICI)1098-2760(20000605)25:5<300::AID-MOP4>3.0.CO;2-S
초록
A 1.55 μm spot-size converter integrated-laser diode (SSC-LD) with a vertically tapered-thickness waveguide was fabricated by using selective-area metalorganic vapor-phase epitaxy (MOVPE). A tapered-thickness profile and PL wavelength shift as large as 238 nm in the waveguide were obtained by using an exponentially tapered shape mask. The SSC-LD exhibited a high slope efficiency of 0.31 W/A and a beam divergence 6.9째×12.4째 without facet coating. The coupling loss between the LD and SMF was measured to be 2.76 dB, and the 1 dB alignment tolerances were 짹2.4 μm for the horizontal direction, 짹2.0 μm for the vertical direction, and 13 μm for the longitudinal direction.
KSP 제안 키워드
As 2, Beam Divergence, Coupling loss, High slope, Laser diode(LD), Longitudinal direction, Slope efficiency, Spot size converter(SSC), Thickness Profile, facet coating, selective-area metalorganic vapor-phase epitaxy