BROWSE
Detail
Journal Article
1.55 ?m spot-size converter integrated-laser diode fabricated by selective-area metalorganic vapor-phase epitaxy
Cited 2 time in 
Share 
Share
- Authors
- Hyun-Soo Kim, Dae Kon Oh, Moon-Ho Park, Nam Hwang, In-Hoon Choi
- Issue Date
- 2000-06
- Citation
- Microwave and Optical Technology Letters, v.25, no.5, pp.300-302
- ISSN
- 0895-2477
- Publisher
- Wiley
- Language
- English
- Type
- Journal Article
- Abstract
- A 1.55 μm spot-size converter integrated-laser diode (SSC-LD) with a vertically tapered-thickness waveguide was fabricated by using selective-area metalorganic vapor-phase epitaxy (MOVPE). A tapered-thickness profile and PL wavelength shift as large as 238 nm in the waveguide were obtained by using an exponentially tapered shape mask. The SSC-LD exhibited a high slope efficiency of 0.31 W/A and a beam divergence 6.9째×12.4째 without facet coating. The coupling loss between the LD and SMF was measured to be 2.76 dB, and the 1 dB alignment tolerances were 짹2.4 μm for the horizontal direction, 짹2.0 μm for the vertical direction, and 13 μm for the longitudinal direction.