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Pulse operation and threshold characteristics of 1.55-μm InAlGaAs-InAlAs VCSELs
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- Authors
- O.-K. Kwon, B.-S. Yoo, J.-H. Shin, J.-H. Baek, B. Lee
- Issue Date
- 2000-09
- Citation
- IEEE Photonics Technology Letters, v.12, no.9, pp.1132-1134
- ISSN
- 1041-1135
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- All-monolithic air-post index-guided vertical-cavity surface-emitting lasers have been demonstrated under pulsed electrical injection at room temperature. The structure grown in single step by metal-organic chemical vapor deposition employs InP lattice matched InAlAs-InAlGaAs Bragg mirrors and a 2{\\lambda}-thick periodic gain active region with 15 InGaAs quantum wells (QWs). We report threshold current characteristics of these devices grown on a 2-in wafer with wide emission wavelength range of 1.51 to approximately 1.59 μm. For the devices larger than 30- μm in diameter, we found the minimum threshold current density of approximately 2.93 kA/cm2 at the emission wavelength of 1.57 μm, corresponding to about 20 nm wavelength offset between photoluminescence peak of InGaAs QWs and resonant cavity wavelength.