상세정보
학술지
Pulse operation and threshold characteristics of 1.55-μm InAlGaAs-InAlAs VCSELs
- 발행일
- 200009
- 출처
- IEEE Photonics Technology Letters, v.12 no.9, pp.1132-1134
- ISSN
- 1041-1135
- 출판사
- IEEE
- 협약과제
- 00MB1500, 다채널 마이크로 레이저 어레이 소자, 유병수
- 초록
- All-monolithic air-post index-guided vertical-cavity surface-emitting lasers have been demonstrated under pulsed electrical injection at room temperature. The structure grown in single step by metal-organic chemical vapor deposition employs InP lattice matched InAlAs-InAlGaAs Bragg mirrors and a 2{\\lambda}-thick periodic gain active region with 15 InGaAs quantum wells (QWs). We report threshold current characteristics of these devices grown on a 2-in wafer with wide emission wavelength range of 1.51 to approximately 1.59 μm. For the devices larger than 30- μm in diameter, we found the minimum threshold current density of approximately 2.93 kA/cm2 at the emission wavelength of 1.57 μm, corresponding to about 20 nm wavelength offset between photoluminescence peak of InGaAs QWs and resonant cavity wavelength.
- KSP 제안 키워드
- 20 nm, Bragg mirrors, Current characteristics, Electrical injection, Lattice matched, Metalorganic chemical vapor deposition, Quantum Well(QW), Room-temperature, Single step, Threshold characteristics, Threshold current density