상세정보
학술지
Stretchable Organic Thin-Film Transistors Fabricated on Elastomer Substrates Using Polyimide Stiff-Island Structures
- 발행일
- 201501
- 출처
- ECS Solid State Letters, v.4 no.1, pp.P1-P3
- ISSN
- 2162-8742
- 출판사
- Electrochemical Society (ECS)
- 초록
- We demonstrate stretchable organic thin-film transistors (OTFTs) on a polyimide stiff-island/elastomer substrate. All processes are performed entirely at elastomer-compatible temperatures. We confirm the basic properties of the poly(vinylidene fluoridetrifluoroethylene) [P(VDF-TrFE)] with a poly(methyl methacrylate) (PMMA) blended film on the elastomer substrate and evaluate the characteristics of the fabricated stretchable OTFTs. A field-effect mobility of 3.4 × 10-3 cm2 V-1 s-1, an Ion/Ioff ratio greater than 103, a subthreshold voltage swing of 12.5 V/decade, and a gate leakage current of 10-10 A were obtained. The endurable maximum strain was approximately 50% for the OTFTs without degrading the field-effect mobility formed on the elastomers.
- KSP 제안 키워드
- Basic properties, First Stokes(S1), Organic thin-film transistors (otfts), Thin-Film Transistor(TFT), VDF-TrFE, Voltage swing, elastomer substrate, field-effect mobility, gate leakage current, maximum strain, methyl methacrylate(Macroporous poly)