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Stretchable Organic Thin-Film Transistors Fabricated on Elastomer Substrates Using Polyimide Stiff-Island Structures
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- Authors
- Soon-Won Jung, Jeong-Seon Choi, Jae Bon Koo, Chan Woo Park, Bock Soon Na, Ji-Young Oh, Sang Seok Lee, Hye Yong Chu
- Issue Date
- 2015-01
- Citation
- ECS Solid State Letters, v.4, no.1, pp.P1-P3
- ISSN
- 2162-8742
- Publisher
- Electrochemical Society (ECS)
- Language
- English
- Type
- Journal Article
- Abstract
- We demonstrate stretchable organic thin-film transistors (OTFTs) on a polyimide stiff-island/elastomer substrate. All processes are performed entirely at elastomer-compatible temperatures. We confirm the basic properties of the poly(vinylidene fluoridetrifluoroethylene) [P(VDF-TrFE)] with a poly(methyl methacrylate) (PMMA) blended film on the elastomer substrate and evaluate the characteristics of the fabricated stretchable OTFTs. A field-effect mobility of 3.4 × 10-3 cm2 V-1 s-1, an Ion/Ioff ratio greater than 103, a subthreshold voltage swing of 12.5 V/decade, and a gate leakage current of 10-10 A were obtained. The endurable maximum strain was approximately 50% for the OTFTs without degrading the field-effect mobility formed on the elastomers.
- KSP Keywords
- Basic properties, First Stokes(S1), Organic thin-film transistors (otfts), Thin-Film Transistor(TFT), VDF-TrFE(PZT/P), elastomer substrate, field-effect mobility, gate leakage current, maximum strain, methyl methacrylate(Macroporous poly), organic thin film transistor(OTFT)