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학술지 Strong Visible Electroluminescence from Silicon Nanocrystals Embedded in a Silicon Carbide Film
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허철, 김태엽, 안창근, 김봉규
Applied Physics Letters, v.106 no.21, pp.1-4
American Institute of Physics (AIP)
We report the strong visible light emission from silicon (Si) nanocrystals (NCs) embedded in a Si carbide (SiC) film. Compared to Si NC light-emitting diode (LED) by employing the Si nitride (SiNx) film as a surrounding matrix, the turn-on voltage of the Si NC LED with the SiC film was significantly decreased by 4 V. This was attributed to a smaller barrier height for injecting the electrons into the Si NCs due to a smaller band gap of SiC film than a SiNx film. The electroluminescence spectra increases with increasing forward voltage, indicating that the electrons are efficiently injected into the Si NCs in the SiC film. The light output power shows a linear increase with increasing forward voltage. The light emission originated from the Si NCs in a SiC film was quite uniform. The power efficiency of the Si NC LED with the SiC film was 1.56 times larger than that of the Si NC LED with the SiNx film. The Si NCs in a SiC film show unique advantages and are a promising candidate for application in optical devices.
KSP 제안 키워드
Band gap, Electroluminescence spectra, Forward voltage, Light output power(Lop), Linear increase, Optical devices, Power Efficiency, SiC film, Silicon carbide film, Silicon nanocrystals(Si NCs), Turn-on voltage